Diode module,YMDBD1200-45,TFM1200XDM45-D200

符号

Symbol

参数名称

Parameter

测试条件

Test Conditions

数值

Value

单位

Unit

VRRM

重复峰值电压

Repetitive voltage

TC= 25 °C

4500

V

IF

正向直流电流

Forward current

DC

1200

A

IFRM

正向重复峰值电流

Peak forward current

tP = 1ms

2400

A

IFSM

浪涌电流

Surge current

VR =0V, tP = 10ms, Tvj = 25 °C

TBD

A

I2t

I2t 值

I2t

VR =0V, tP = 10ms, Tvj = 25 °C

530

kA2s

Visol

绝缘电压(模块)

Isolation voltage - per module

短接所有端子，端子与基板间施加电压 ( Commoned terminals to base plate), AC RMS,1 min, 50Hz, TC= 25 °C

10200

V

QPD

局部放电电荷(模块)

Partial discharge - per module

IEC1287. V1=6900V, V2=5100V,50Hz

RMS,TC= 25 °C

10

pC

符号

Symbol

参数名称

Parameter

条件

Test Conditions

最小值 Min.

典型值 Typ.

最大值

Max.

单位

Unit

IRRM

重复反向电流

Repetitive reverse

current

VRM = VRRM

1

mA

VRM = VRRM, TC=125 °C

50

mA

VF

正向电压

Forward voltage

IF = 1200A

2.70

V

IF = 1200A,Tvj = 125 °C

3.10

V

Qrr

反向恢复电荷

Reverse recovery

charge

VCC = 2800V,IF =1200A, - diF/dt = 3800A/μs,

RG(ON)=1.5Ω ,

CGE=220nF,

LS=150nH,

(Tvj= 125 °C).

IGBT:

TIM1200ASM45-PSA011

Tvj= 25 °C

1220

μC

Tvj= 125 °C

1750

μC

Irr

反向恢复电流

Reverse recovery

current

Tvj= 25 °C

1320

A

Tvj= 125 °C

1420

A

Erec

反向恢复损耗

Reverse recovery

energy

Tvj= 25 °C

2.60

J

Tvj= 125 °C

3.90

J