Diode module,MDBD1500-33-01 |I-01,FM1500NDM33-D200

Symbol

Parameter

Test Conditions

Value

Unit

VRRM

Repetitive voltage

TC= 25 °C

3300

V

IF

Forward current

DC

1500

A

IFRM

Peak forward current

tP = 1ms

3000

A

IFSM

Surge current

VR =0V, tP = 10ms, Tvj = 25 °C

12000

A

I2t

I2t

I2t

VR =0V, tP = 10ms, Tvj = 125 °C

720

kA2s

Visol

Isolation voltage - per module

(Commoned terminals to base plate), AC RMS,1 min, 50Hz, TC= 25 °C

6000

V

QPD

Partial discharge - per module

IEC1287. V1=3500V, V2=2600V,50Hz

RMS,TC= 25 °C

10

pC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IRRM

Repetitive reverse

current

VRM = VRRM

1

mA

VRM = VRRM, TC=150 °C

100

mA

VF

Forward voltage

IF = 1500A

2.40

V

IF = 1500A,Tvj = 150 °C

2.80

V

Qrr

Reverse recovery

charge

IF =1500A,

VCC = 1800V,

RG(ON)=1.0Ω ,

CGE=330nF,

LS=150nH,

- diF/dt = 4000A/μs,

(Tvj= 150 °C).

IGBT:

TIM1500ESM33-PSA011

Tvj= 25 °C

1020

μC

Tvj= 150 °C

1710

μC

Irr

Reverse recovery

current

Tvj= 25 °C

1260

A

Tvj= 150 °C

1450

A

Erec

Reverse recovery

energy

Tvj= 25 °C

1.50

J

Tvj= 150 °C

2.60

J