Y50ZKG,Fast Recovery Diode

I_T(AV)

1061A

V_RRM

4000V   4200V

4500V   5000V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=85℃

1061

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

4000

5000

V

IRRM

Repetitive peak current

at V_RRM

150

100

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6V_RRM

150

15

kA

I2t

I2t for fusing coordination

1125

A²s*10³

VFO

Threshold voltage

150

1.73

V

rF

Forward slope resistance

0.51

mΩ

VFM

Peak forward voltage

ITM=1500A, F=24kN

25

3.50

V

Irm

Reverse recovery current

ITM=1000A, tp=4000µs, di/dt=-60A/µs, VR=100V

150

330

A

trr

Reverse recovery time

10

µs

Qrr

Recovery charge

1500

1800

µC

Rth(j-c)

Thermal resistance Junction to case

At 180° sine, double side cooled Clamping force 24kN

0.020

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.005

Fm

Mounting force

19

26

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

440

g

Outline

ZT50cT