MK(H)x75 MK75 ,Fast Turn-off Thyristor Modules,Air Cooling

VRRM,VDRM

Type & Outline

600V

MKx75-06-216F3B

MHx75-06-216F3B

800V

MKx75-08-216F3B

MHx75-08-216F3B

1000V

MKx75-10-216F3B

MHx75-10-216F3B

1200V

MKx75-12-216F3B

MHx75-12-216F3B

1400V

MKx75-14-216F3B

MHx75-14-216F3B

1600V

MKx75-16-216F3B

MHx75-16-216F3B

1800V

MKx75-18-216F3B

MHx75-18-216F3B

1800V

MK75-18-216F3BG

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(。C)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Single side cooled,Tc=85。C

125

75

A

IT(RMS)

RMS on-state current

118

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

30

mA

I_TSM

Surge on-state current

10ms half sine wave VR=60%VRRM

125

1.6

kA

I²t

I2t for fusing coordination

13

10³A²s

V_TO

Threshold voltage

125

1.50

V

rT

On-state slope resistance

4.00

mΩ

V_TM

Peak on-state voltage

ITM=225A

25

2.53

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

800

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

tq

Circuit commutated turn-off time

ITM=200A, tp=4000μs, VR=100V dv/dt=30V/μs ,di/dt=-20A/μs

125

20

40

μs

25

6

16

μs

I_GT

Gate trigger current

VA= 12V, IA= 1A

25

30

150

mA

V_GT

Gate trigger voltage

0.8

2.5

V

I_H

Holding current

20

200

mA

IL

Latching current

1000

mA

V_GD

Non-trigger gate voltage

VDM= 67%VDRM

125

0.2

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.20

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.04

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

2500

V

Fm

Terminal connection torque(M6)

4.5

6.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

320

g

Outline

216F3B