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IGBT Module,,4500V 2000A ,Press Package, with FWD
Features
Applications
Maximum Rated Values
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|
Collector-Emitter Voltage |
VCES |
VGE=0V,Tvj=25°C |
4500 |
V |
|
DC Collector Current |
IC |
TC=100°C,Tvj=125°C |
2000 |
A |
|
Peak Collector Current |
ICM |
tp=1ms |
4000 |
A |
|
Gate-Emitter Voltage |
VGES |
|
±20 |
V |
|
Total Power Dissipation |
Ptot |
TC=25°C,Tvj=125°C |
20800 |
W |
|
DC Forward Current |
IF |
|
2000 |
A |
|
Peak Forward Current |
IFRM |
tp=1ms |
4000 |
A |
|
Surge Current |
IFSM |
VR=0V,Tvj=125°C, tp=10ms,half-sinewave |
14000 |
A |
|
IGBT Short Circuit SOA |
tpsc |
VCC=3400V,VCEM CHIP≤4500V VGE≤15V,Tvj≤125°C |
10 |
μs |
|
Maximum Junction Temperature |
Tvj(max) |
|
125 |
℃ |
|
Junction Operating Temperature |
Tvj(op) |
|
-40~125 |
℃ |
|
Case temperature |
TC |
|
-40~125 |
℃ |
|
Storage Temperature |
Tstg |
|
-40~70 |
℃ |
|
Mounting force |
FM |
|
60~75 |
kN |
IGBT Characteristic Values
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|||
|
Min. |
Typ. |
Max. |
|||||
|
Collector-Emitter Breakdown Voltage |
V(BR)CES |
VGE=0V, IC=10mA, Tvj=25℃ |
4500 |
|
|
V |
|
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC=2000A, VGE=15V |
Tvj=25℃ |
|
2.70 |
3.05 |
V |
|
Tvj=125℃ |
|
3.35 |
3.85 |
V |
|||
|
Collector-Emitter Cut-off Current |
ICES |
VCE=4500V, VGE=0V |
Tvj=25℃ |
|
|
1 |
mA |
|
Tvj=125℃ |
|
15 |
100 |
mA |
|||
|
Gate-Emitter Leakage Current |
IGES |
VCE=0V, VGE=±20V, Tvj=125℃ |
-500 |
|
500 |
nA |
|
|
Gate-Emitter Threshold Voltage |
VGE(th) |
IC=320mA, VCE=VGE, Tvj=25℃ |
6.7 |
|
7.7 |
V |
|
|
Gate Charge |
QG |
IC=2000A, VCE=2800V, VGE=-15V~+15V |
|
10 |
|
μC |
|
|
Input Capacitance |
Cies |
VCE=25V, VGE=0V, f=500kHz, Tvj=25℃ |
|
213 |
|
nF |
|
|
Output Capacitance |
Coes |
|
15.3 |
|
nF |
||
|
Reverse Transfer Capacitance |
Cres |
|
4.7 |
|
nF |
||
|
Internal Gate Resistance |
RGint |
|
|
0 |
|
Ω |
|
|
Turn-on Delay Time |
td(on) |
IC=2000A, VCE=2800V, VGE=±15V, RGon=1.8Ω, RGoff=8.2Ω, Cge=330nF, LS=140nH, Inductive Load |
Tvj=25℃ |
|
1100 |
|
ns |
|
Tvj=125℃ |
|
900 |
|
ns |
|||
|
Rise Time |
tr |
Tvj=25℃ |
|
400 |
|
ns |
|
|
Tvj=125℃ |
|
450 |
|
ns |
|||
|
Turn-off Delay Time |
td(off) |
Tvj=25℃ |
|
3800 |
|
ns |
|
|
Tvj=125℃ |
|
4100 |
|
ns |
|||
|
Fall Time |
tf |
Tvj=25℃ |
|
1200 |
|
ns |
|
|
Tvj=125℃ |
|
1400 |
|
ns |
|||
|
Turn-on Switching Energy |
Eon |
Tvj=25℃ |
|
14240 |
|
mJ |
|
|
Tvj=125℃ |
|
15730 |
|
mJ |
|||
|
Turn-off Switching Energy |
Eoff |
Tvj=25℃ |
|
6960 |
|
mJ |
|
|
Tvj=125℃ |
|
8180 |
|
mJ |
|||
|
Short Circuit Current |
ISC |
VGE≤15V, tpsc≤10µs, VCC=3400V, Tvj=125℃ VCEM CHIP≤4500V |
|
8400 |
|
A |
|
Diode Characteristic Values
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|||
|
Min. |
Typ. |
Max. |
|||||
|
Forward Voltage |
VF |
IF=2000A |
Tvj=25℃ |
|
2.60 |
|
V |
|
Tvj=125℃ |
|
2.85 |
|
V |
|||
|
Reverse Recovery Current |
Irr |
IF=2000A, VR=2800V, VGE=15V, RGon=1.8Ω, LS=140nH, Inductive load |
Tvj=25℃ |
|
1620 |
|
A |
|
Tvj=125℃ |
|
1970 |
|
A |
|||
|
Reverse Recovery Charge |
Qrr |
Tvj=25℃ |
|
1750 |
|
uC |
|
|
Tvj=125℃ |
|
2700 |
|
uC |
|||
|
Reverse Recovery Time |
trr |
Tvj=25℃ |
|
4.0 |
|
us |
|
|
Tvj=125℃ |
|
5.1 |
|
us |
|||
|
Reverse Recovery Energy Loss |
Erec |
Tvj=25℃ |
|
2350 |
|
mJ |
|
|
Tvj=125℃ |
|
3860 |
|
mJ |
|||
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