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Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise note
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC= 100oC |
1073 650 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
1300 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
4.2 |
kW |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
|
IF |
Diode Continuous Forward Current |
650 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
1300 |
A |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +150 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=650A,VGE=15V, Tj=25oC |
|
1.90 |
2.35 |
V |
|
IC=650A,VGE=15V, Tj=125oC |
|
2.35 |
|
|||
|
IC=650A,VGE=15V, Tj=150oC |
|
2.45 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24.0mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
2.3 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
72.3 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
1.75 |
|
nF |
|
|
QG |
Gate Charge |
VGE=- 15…+15V |
|
5.66 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=650A, RGon= 1.8Ω,RGoff=2.7Ω, VGE=±15V,Tj=25oC |
|
468 |
|
ns |
|
tr |
Rise Time |
|
86 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
850 |
|
ns |
|
|
tf |
Fall Time |
|
363 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
226 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
161 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=650A, RGon= 1.8Ω,RGoff=2.7Ω, VGE=±15V,Tj= 125oC |
|
480 |
|
ns |
|
tr |
Rise Time |
|
110 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
1031 |
|
ns |
|
|
tf |
Fall Time |
|
600 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
338 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
226 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=650A, RGon= 1.8Ω,RGoff=2.7Ω, VGE=±15V,Tj= 150oC |
|
480 |
|
ns |
|
tr |
Rise Time |
|
120 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
1040 |
|
ns |
|
|
tf |
Fall Time |
|
684 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
368 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
242 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC= 1000V, VCEM≤1700V |
|
2600 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=650A,VGE=0V,Tj=25oC |
|
1.85 |
2.30 |
V |
|
IF=650A,VGE=0V,Tj= 125oC |
|
1.98 |
|
|||
|
IF=650A,VGE=0V,Tj= 150oC |
|
2.02 |
|
|||
|
Qr |
Recovered Charge |
VR=900V,IF=650A, -di/dt=5980A/μs,VGE=- 15V Tj=25oC |
|
176 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
765 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
87.4 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=900V,IF=650A, -di/dt=5980A/μs,VGE=- 15V Tj= 125oC |
|
292 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
798 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
159 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=900V,IF=650A, -di/dt=5980A/μs,VGE=- 15V Tj= 150oC |
|
341 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
805 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
192 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
|
ΔR/R |
Deviation of R100 |
TC= 100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
|
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
|
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
|
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
|
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
LCE |
Stray Inductance |
|
18 |
|
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.30 |
|
mΩ |
|
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
35.8 71.3 |
K/kW |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
13.5 26.9 4.5 |
|
K/kW |
|
M |
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M5 |
1.8 8.0 3.0 |
|
2.1 10.0 6.0 |
N.m |
|
G |
Weight of Module |
|
810 |
|
g |
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