Home / Products / IGBT module / 1200V
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
|
Symbol |
Description |
Values |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=90oC |
900 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
1800 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
3409 |
W |
Diode
|
Symbol |
Description |
Values |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current |
900 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
1800 |
A |
|
IFSM |
Surge Forward Current tp=10ms @ Tj=25oC @ Tj=150oC |
4100 3000 |
A |
|
I2t |
I2t-value,tp=10ms @ Tj=25oC @ Tj=150oC |
84000 45000 |
A2s |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=900A,VGE=15V, Tj=25oC |
|
1.40 |
1.85 |
V |
|
IC=900A,VGE=15V, Tj=125oC |
|
1.60 |
|
|||
|
IC=900A,VGE=15V, Tj=175oC |
|
1.65 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24.0mA,VCE=VGE, Tj=25oC |
5.5 |
6.3 |
7.0 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
0.5 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
51.5 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.36 |
|
nF |
|
|
QG |
Gate Charge |
VGE=- 15…+15V |
|
13.6 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RG=0.51Ω, LS=40nH, VGE=-8V/+15V, Tj=25oC |
|
330 |
|
ns |
|
tr |
Rise Time |
|
140 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
842 |
|
ns |
|
|
tf |
Fall Time |
|
84 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
144 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
87.8 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RG=0.51Ω, LS=40nH, VGE=-8V/+15V, Tj=125oC |
|
373 |
|
ns |
|
tr |
Rise Time |
|
155 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
915 |
|
ns |
|
|
tf |
Fall Time |
|
135 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
186 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
104 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RG=0.51Ω, LS=40nH, VGE=-8V/+15V, Tj=175oC |
|
390 |
|
ns |
|
tr |
Rise Time |
|
172 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
950 |
|
ns |
|
|
tf |
Fall Time |
|
162 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
209 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
114 |
|
mJ |
|
|
ISC |
SC Data |
tP≤8μs,VGE=15V, Tj=150oC,VCC=800V, VCEM ≤1200V |
|
3200 |
|
A |
|
tP≤6μs,VGE=15V, Tj=175oC,VCC=800V, VCEM ≤1200V |
|
3000 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=900A,VGE=0V,Tj=25oC |
|
1.55 |
2.00 |
V |
|
IF=900A,VGE=0V,Tj=125oC |
|
1.65 |
|
|||
|
IF=900A,VGE=0V,Tj=175oC |
|
1.55 |
|
|||
|
Qr |
Recovered Charge |
VR=600V,IF=900A, -di/dt=4930A/μs,VGE=-8V, LS=40nH,Tj=25oC |
|
91.0 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
441 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
26.3 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=600V,IF=900A, -di/dt=4440A/μs,VGE=-8V, LS=40nH,Tj=125oC |
|
141 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
493 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
42.5 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=600V,IF=900A, -di/dt=4160A/μs,VGE=-8V, LS=40nH,Tj=175oC |
|
174 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
536 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
52.4 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
|
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
|
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
|
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
|
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
|
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
LCE |
Stray Inductance |
|
20 |
|
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.80 |
|
mΩ |
|
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.044 0.076 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.028 0.049 0.009 |
|
K/W |
|
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 |
3.0 3.0 |
|
6.0 6.0 |
N.m |
|
G |
Weight of Module |
|
350 |
|
g |
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