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3300V

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YMIF400-33

IGBT Module,3300V 400A

Brand:
CRRC
Spu:
YMIF400-33
  • Introduction
Introduction

Features

●SPT+chip-set for low switching losses

Low VCEsat

●Low drivering power

●AlSiC base plate for high power cycling capability

●AlN substrate for low thermal resistance

 

Typical application

●Traction drives

●DC chopper

●Medium voltage inverters/converters

 

 

Maximum rated values

Parameter

Symbol

Conditions

min

max

Unit

Collector-emitter voltage

VCES

VGE =0V,Tvj ≥25°C

 

3300

V

DC collector current

IC

TC =80°C

 

400

A

Peak collector current

ICM

tp=1ms,Tc=80°C

 

800

A

Gate-emitter voltage

VGES

 

-20

20

V

Total power dissipation

Ptot

TC =25°C,perswitch(IGBT)

 

7100

W

DC forward current

IF

 

 

400

A

Peak forward current

IFRM

tp=1ms

 

800

A

Surge current

IFSM

VR =0V,Tvj =125°C,tp=10ms, half-sine wave

 

3000

A

IGBT short circuit SOA

tpsc

VCC =2500V,VCEMCHIP ≤3300V VGE ≤15V,Tvj≤125°C

 

10

μs

Isolation voltage

Visol

1min,f=50Hz

 

10200

V

Junction temperature

Tvj

 

 

150

Junction operating temperature

Tvj(op)

 

-50

150

Case temperature

TC

 

-50

125

Storage temperature

Tstg

 

-50

125

 

Mounting torques

MS

Base-heatsink M6 screws

4

6

 

 

Nm

MT1

Main terminals M8 screws

8

10

 

IGBT characteristic values

Parameter

Symbol

Conditions

Min

type

max

Unit

Collector (- emitter) breakdownvoltage

V(BR)CES

VGE =0V,IC=5mA, Tvj=25°C

3300

 

 

V

Collector-emitter saturation voltage

VCEsat

IC =400A, VGE =15V

Tvj= 25°C

 

3.0

 

V

Tvj=125°C

 

3.6

 

V

Collector cut off current

ICES

VCE =3300V, VGE =0V

Tvj= 25°C

 

 

5

mA

Tvj=125°C

 

 

50

mA

Gate leakage current

IGES

VCE =0V,VGE =20V, Tvj =125°C

-500

 

500

nA

Gate-emitter threshold voltage

VGE(TH)

IC =80mA,VCE =VGE, Tvj =25°C

5.5

 

7.5

V

Gate charge

Qg

IC =400A,VCE =1800V, VGE =-15V … 15V

 

4.0

 

µC

Input capacitance

Cies

 

 

VCE =25V,VGE =0V, f=1MHz,Tvj =25°C

 

65

 

 

 

 

nF

Output capacitance

Coes

 

3.7

 

Reverse transfer capacitance

Cres

 

0.8

 

Turn-on delay time

td(on)

 

 

 

 

VCC =1800V,

IC =400A,

RG =2.3Ω ,

VGE =±15V,

Lσ=280nH,

感性负载

Tvj =   25 °C

 

650

 

 

 

ns

Tvj = 125 °C

 

750

 

Rise time

tr

Tvj =   25 °C

 

400

 

Tvj = 125 °C

 

470

 

Turn-off delay time

td(off)

Tvj =   25 °C

 

1600

 

 

 

ns

Tvj = 125 °C

 

1800

 

Fall time

tf

Tvj =   25 °C

 

1100

 

Tvj = 125 °C

 

1200

 

Turn-on switching loss energy

Eon

Tvj =   25 °C

 

1400

 

mJ

Tvj = 125 °C

 

1800

 

Turn-off switching loss energy

Eoff

Tvj =   25 °C

 

1300

 

mJ

Tvj = 125 °C

 

1700

 

Short circuit current

ISC

tpsc  ≤ 10μs, VGE =15V,   Tvj  = 125°C,VCC = 2500V

 

2500

 

A

 

Diode characteristic values

Parameter

Symbol

Conditions

min

type

max

Unit

Forward voltage

VF

IF =400A

Tvj = 25 °C

 

2.3

2.6

V

Tvj = 125 °C

 

2.35

2.6

Reverse recovery current

Irr

 

VCC =1800V,

IC =400A,

RG =2.3Ω ,

VGE =±15V,

Lσ=280nH,

Tvj = 25 °C

 

900

 

A

Tvj = 125 °C

 

1000

 

Recovered charge

Qrr

Tvj = 25 °C

 

700

 

µC

Tvj = 125 °C

 

1000

 

Reverse recovery time

trr

Tvj = 25 °C

 

850

 

ns

Tvj = 125 °C

 

2200

 

Reverse recovery energy

Erec

Tvj =25 °C

 

850

 

mJ

Tvj = 125 °C

 

1300

 

 

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