Home / Products / IGBT module / 3300V
Features
●SPT+chip-set for low switching losses |
●Low VCEsat |
●Low drivering power |
●AlSiC base plate for high power cycling capability |
●AlN substrate for low thermal resistance |
Typical application
●Traction drives |
●DC chopper |
●Medium voltage inverters/converters |
Maximum rated values
Parameter |
Symbol |
Conditions |
min |
max |
Unit |
Collector-emitter voltage |
VCES |
VGE =0V,Tvj ≥25°C |
|
3300 |
V |
DC collector current |
IC |
TC =80°C |
|
400 |
A |
Peak collector current |
ICM |
tp=1ms,Tc=80°C |
|
800 |
A |
Gate-emitter voltage |
VGES |
|
-20 |
20 |
V |
Total power dissipation |
Ptot |
TC =25°C,perswitch(IGBT) |
|
7100 |
W |
DC forward current |
IF |
|
|
400 |
A |
Peak forward current |
IFRM |
tp=1ms |
|
800 |
A |
Surge current |
IFSM |
VR =0V,Tvj =125°C,tp=10ms, half-sine wave |
|
3000 |
A |
IGBT short circuit SOA |
tpsc |
VCC =2500V,VCEMCHIP ≤3300V VGE ≤15V,Tvj≤125°C |
|
10 |
μs |
Isolation voltage |
Visol |
1min,f=50Hz |
|
10200 |
V |
Junction temperature |
Tvj |
|
|
150 |
℃ |
Junction operating temperature |
Tvj(op) |
|
-50 |
150 |
℃ |
Case temperature |
TC |
|
-50 |
125 |
℃ |
Storage temperature |
Tstg |
|
-50 |
125 |
℃ |
Mounting torques |
MS |
Base-heatsink ,M6 screws |
4 |
6 |
Nm |
MT1 |
Main terminals ,M8 screws |
8 |
10 |
IGBT characteristic values
Parameter |
Symbol |
Conditions |
Min |
type |
max |
Unit |
|
Collector (- emitter) breakdownvoltage |
V(BR)CES |
VGE =0V,IC=5mA, Tvj=25°C |
3300 |
|
|
V |
|
Collector-emitter saturation voltage |
VCEsat |
IC =400A, VGE =15V |
Tvj= 25°C |
|
3.0 |
|
V |
Tvj=125°C |
|
3.6 |
|
V |
|||
Collector cut off current |
ICES |
VCE =3300V, VGE =0V |
Tvj= 25°C |
|
|
5 |
mA |
Tvj=125°C |
|
|
50 |
mA |
|||
Gate leakage current |
IGES |
VCE =0V,VGE =20V, Tvj =125°C |
-500 |
|
500 |
nA |
|
Gate-emitter threshold voltage |
VGE(TH) |
IC =80mA,VCE =VGE, Tvj =25°C |
5.5 |
|
7.5 |
V |
|
Gate charge |
Qg |
IC =400A,VCE =1800V, VGE =-15V … 15V |
|
4.0 |
|
µC |
|
Input capacitance |
Cies |
VCE =25V,VGE =0V, f=1MHz,Tvj =25°C |
|
65 |
|
nF |
|
Output capacitance |
Coes |
|
3.7 |
|
|||
Reverse transfer capacitance |
Cres |
|
0.8 |
|
|||
Turn-on delay time |
td(on) |
VCC =1800V, IC =400A, RG =2.3Ω , VGE =±15V, Lσ=280nH, 感性负载 |
Tvj = 25 °C |
|
650 |
|
ns |
Tvj = 125 °C |
|
750 |
|
||||
Rise time |
tr |
Tvj = 25 °C |
|
400 |
|
||
Tvj = 125 °C |
|
470 |
|
||||
Turn-off delay time |
td(off) |
Tvj = 25 °C |
|
1600 |
|
ns |
|
Tvj = 125 °C |
|
1800 |
|
||||
Fall time |
tf |
Tvj = 25 °C |
|
1100 |
|
||
Tvj = 125 °C |
|
1200 |
|
||||
Turn-on switching loss energy |
Eon |
Tvj = 25 °C |
|
1400 |
|
mJ |
|
Tvj = 125 °C |
|
1800 |
|
||||
Turn-off switching loss energy |
Eoff |
Tvj = 25 °C |
|
1300 |
|
mJ |
|
Tvj = 125 °C |
|
1700 |
|
||||
Short circuit current |
ISC |
tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 2500V |
|
2500 |
|
A |
Diode characteristic values
Parameter |
Symbol |
Conditions |
min |
type |
max |
Unit |
|
Forward voltage |
VF |
IF =400A |
Tvj = 25 °C |
|
2.3 |
2.6 |
V |
Tvj = 125 °C |
|
2.35 |
2.6 |
||||
Reverse recovery current |
Irr |
VCC =1800V, IC =400A, RG =2.3Ω , VGE =±15V, Lσ=280nH, |
Tvj = 25 °C |
|
900 |
|
A |
Tvj = 125 °C |
|
1000 |
|
||||
Recovered charge |
Qrr |
Tvj = 25 °C |
|
700 |
|
µC |
|
Tvj = 125 °C |
|
1000 |
|
||||
Reverse recovery time |
trr |
Tvj = 25 °C |
|
850 |
|
ns |
|
Tvj = 125 °C |
|
2200 |
|
||||
Reverse recovery energy |
Erec |
Tvj =25 °C |
|
850 |
|
mJ |
|
Tvj = 125 °C |
|
1300 |
|
Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.