Home / Products / IGBT module / 3300V
Key Parameters
|
VCES |
3300 V |
|
VCE(sat) |
(typ) 2.40 V |
|
IC |
(max) 1000 A |
|
IC(RM) |
(max) 2000 A |
Typical Applications
Typical Applications
Absolute Maximum Rating
|
(Symbol) |
(Parameter) |
(Test Conditions) |
(value) |
(Unit) |
|
VCES |
Collector-emitter voltage |
VGE = 0V, TC= 25 °C |
3300 |
V |
|
VGES |
Gate-emitter voltage |
TC= 25 °C |
± 20 |
V |
|
I C |
Collector-emitter current |
TC = 95 °C |
1000 |
A |
|
IC(PK) |
Peak collector current |
t P= 1ms |
2000 |
A |
|
P max |
Max. transistor power dissipation |
Tvj = 150°C, TC = 25 °C |
10.4 |
kW |
|
I 2t |
Diode I2t |
VR =0V, t P = 10ms, Tvj = 150 °C |
320 |
kA2s |
|
Visol |
Isolation voltage – per module |
Commoned terminals to base plate), AC RMS,1 min, 50Hz,TC= 25 °C |
6000 |
V |
|
Q PD |
Partial discharge – per module |
IEC1287. V 1 = 3500V, V 2 = 2600V, 50Hz RMS, TC= 25 °C |
10 |
pC |
Electrical Characristics
|
(Symbol) |
(Parameter) |
(Test Conditions) |
(Min) |
(Typ) |
(Max) |
(Unit) |
|
|
I CES |
Collector cut-off current |
VGE = 0V,VCE = VCES |
|
|
1 |
mA |
|
|
VGE = 0V, VCE = VCES , TC= 125 ° C |
|
|
60 |
mA |
|||
|
VGE = 0V, VCE = VCES , TC= 150 ° C |
|
|
100 |
mA |
|||
|
I GES |
Gate leakage current |
VGE = ±20V, VCE = 0V |
|
|
1 |
μA |
|
|
VGE (TH) |
Gate threshold voltage |
I C= 80mA, VGE= VCE |
5.50 |
6.10 |
7.00 |
V |
|
|
VCE |
(*1) (sat) |
Collector-emitter saturation voltage |
VGE= 15V, I C= 1000A |
|
2.40 |
2.90 |
V |
|
VGE= 15V, I C= 1000A,Tvj = 125 ° C |
|
2.95 |
3.40 |
V |
|||
|
VGE= 15V, I C= 1000A,Tvj = 150 ° C |
|
3.10 |
3.60 |
V |
|||
|
I F |
Diode forward current |
DC |
|
1000 |
|
A |
|
|
I FRM |
Diode maximum forward current |
t P = 1ms |
|
2000 |
|
A |
|
|
VF(*1) |
Diode forward voltage |
I F= 1000A |
|
2.10 |
2.60 |
V |
|
|
I F= 1000A, Tvj= 125 ° C |
|
2.25 |
2.70 |
V |
|||
|
I F= 1000A, Tvj= 150 ° C |
|
2.25 |
2.70 |
V |
|||
|
C ies |
Input capacitance |
VCE= 25V, VGE= 0V, f = 1MHz |
|
170 |
|
nF |
|
|
Q g |
Gate charge |
±15V |
|
17 |
|
μC |
|
|
C res |
Reverse transfer capacitance |
VCE= 25V, VGE= 0V, f = 1MHz |
|
4 |
|
nF |
|
|
L M |
Module inductance |
|
|
15 |
|
nH |
|
|
R INT |
Internal transistor resistance |
|
|
165 |
|
μΩ |
|
|
I SC |
Short circuit current, ISC |
Tvj = 150° C, VCC = 2500V, VGE≤15V, tp≤10μs, VCE(max) = VCES – L (*2)×di/dt, IEC 6074-9 |
|
3900 |
|
A |
|
|
td(off) |
Turn-off delay time |
I C =1000A VCE =1800V C GE = 220nF L ~ 150nH VGE = ±15V RG(ON) = 1.5Ω RG(OFF)= 2.2Ω |
|
1800 |
|
ns |
|
t f |
Fall time |
|
530 |
|
ns |
|
|
E OFF |
Turn-off energy loss |
|
1600 |
|
mJ |
|
|
td(on) |
Turn-on delay time |
|
680 |
|
ns |
|
|
t r |
Rise time |
|
320 |
|
ns |
|
|
EON |
Turn-on energy loss |
|
1240 |
|
mJ |
|
|
Q rr |
Diode reverse recovery charge |
I F =1000A VCE =1800V diF/dt =3300A/us |
|
780 |
|
μC |
|
I rr |
Diode reverse recovery current |
|
810 |
|
A |
|
|
E rec |
Diode reverse recovery energy |
|
980 |
|
mJ |
|
|
td(off) |
Turn-off delay time |
I C =1000A VCE =1800V C GE = 220nF L ~ 150nH VGE = ±15V RG(ON) = 1.5Ω RG(OFF)= 2.2Ω |
|
1940 |
|
ns |
|
t f |
Fall time |
|
580 |
|
ns |
|
|
E OFF |
Turn-off energy loss |
|
1950 |
|
mJ |
|
|
td(on) |
Turn-on delay time |
|
660 |
|
ns |
|
|
t r |
Rise time |
|
340 |
|
ns |
|
|
EON |
Turn-on energy loss |
|
1600 |
|
mJ |
|
|
Q rr |
Diode reverse recovery charge |
I F =1000A VCE =1800V diF/dt =3300A/us |
|
1200 |
|
μC |
|
I rr |
Diode reverse recovery current |
|
930 |
|
A |
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