YMIBD800-17

(Symbol)

(Parameter)

(Test Conditions)

(value)

(Unit)

VCES

Collector-emitter voltage

V GE = 0V, TC= 25 。C

1700

V

V GES

Gate-emitter voltage

TC= 25 。C

± 20

V

I C

Collector-emitter current

TC  = 80 。C

800

A

I C(PK)

Peak collector current

t P=1ms

1600

A

P max

Max. transistor power dissipation

Tvj  = 150。C, TC = 25 。C

6.94

kW

I 2t

Diode I 2t

VR =0V, t P = 10ms, Tvj = 125 。C

120

kA2s

Visol

Isolation voltage – per module

( Commoned terminals to base plate),

AC RMS,1 min, 50Hz,TC= 25 。C

4000

V

Q PD

Partial discharge – per module

IEC1287. V 1 = 1800V, V2 = 1300V, 50Hz RMS, TC= 25 。C

10

pC

(Symbol)

 (Parameter)

(Test Conditions)

(Min)

(Typ)

(Max)

(Unit)

I CES

Collector cut-off current

V GE = 0V,VCE  = VCES

1

mA

V GE = 0V, VCE  = VCES , TC=125 ° C

25

mA

I GES

Gate leakage current

V GE = ±20V, VCE  = 0V

4

μA

V GE (TH)

Gate threshold voltage

I C = 40mA, V GE = VCE

5.00

5.70

6.50

V

VCE (sat)(*1)

Collector-emitter saturation voltage

V GE =15V, I C  = 800A

2.30

2.60

V

V GE =15V, I C  = 800A,Tvj = 125 ° C

2.80

3.10

V

I F

Diode forward current

直流 DC

800

A

I FRM

Diode maximum forward current

t P = 1ms

1600

A

VF(*1)

Diode forward voltage

I F = 800A

1.70

2.00

V

I F = 800A, Tvj  = 125 ° C

1.80

2.10

V

C ies

Input capacitance

VCE = 25V, V GE  = 0V, f = 1MHz

60

nF

Q g

Gate charge

±15V

9

μC

C res

Reverse transfer capacitance

VCE = 25V, V GE  = 0V, f = 1MHz

-

nF

L M

Module inductance

20

nH

R INT

Internal transistor resistance

270

μΩ

I SC

Short circuit current, ISC

Tvj = 125° C, VCC  = 1000V,

V GE ≤15V, tp ≤10μs,

VCE(max) = VCES – L (*2)×di/dt,

IEC 6074-9

3700

A

td(off)

Turn-off delay time

I C =800A

VCE =900V

L ~ 100nH

V GE = ±15V

RG(ON) = 2.2Ω

RG(OFF)= 2.2Ω

890

ns

t f

Fall time

220

ns

E OFF

Turn-off energy loss

220

mJ

td(on)

Turn-on delay time

320

ns

t r

Rise time

190

ns

EON

Turn-on energy loss

160

mJ

Q rr

Diode reverse recovery charge

I F = 800A

VCE = 900V

diF/dt =4000A/us

260

μC

I rr

Diode reverse recovery current

510

A

E rec

Diode reverse recovery energy

180

mJ

td(off)

Turn-off delay time

I C =800A

VCE =900V

L ~ 100nH

V GE = ±15V

RG(ON) = 2.2Ω

RG(OFF)= 2.2Ω

980

ns

t f

Fall time

280

ns

E OFF

Turn-off energy loss

290

mJ

td(on)

Turn-on delay time

400

ns

t r

Rise time

250

ns

EON

Turn-on energy loss

230

mJ

Q rr

Diode reverse recovery charge

I F = 800A

VCE = 900V

diF/dt =4000A/us

420

μC

I rr

Diode reverse recovery current

580

A

E rec

Diode reverse recovery energy

280

mJ