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IGBT Module，1700V 1200A
Key Parameters
|
VCES |
1700 |
V |
|
|
VCE(sat) |
(typ) |
1.80 |
V |
|
IC |
(max) |
1200 |
A |
|
IC(RM) |
(max) |
2400 |
A |
Typical Applications
Features
Absolute Maximum Ratings
|
(Symbol) |
(Parameter) |
(Test Conditions) |
(value) |
(Unit) |
|
VCES |
Collector-emitter voltage |
V GE = 0V, TC= 25 。C |
1700 |
V |
|
V GES |
Gate-emitter voltage |
TC= 25 。C |
± 20 |
V |
|
I C |
Collector-emitter current |
TC = 75 。C |
1200 |
A |
|
I C(PK) |
Peak collector current |
t P=1ms |
2400 |
A |
|
P max |
Max. transistor power dissipation |
Tvj = 150。C, TC = 25 。C |
5.68 |
kW |
|
I 2t |
Diode I 2t |
VR =0V, t P = 10ms, Tvj = 125 。C |
130 |
kA2s |
|
Visol |
Isolation voltage – per module |
( Commoned terminals to base plate), AC RMS,1 min, 50Hz,TC= 25 。C |
4000 |
V |
|
Q PD |
Partial discharge – per module |
IEC1287. V 1 = 1800V, V2 = 1300V, 50Hz RMS, TC= 25 。C |
10 |
pC |
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