Y50KAD,High Frequency Thyristor

IT(AV)

1260A

VDRM,VRRM

1200V 1400V

tq

12~28µs

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Double side cooled,

TC=55。C

125

1260

A

VDRM VRRM

Repetitive peak off-state voltage Repetitive peak reverse voltage

tp=10ms

125

1100

1400

V

IDRM IRRM

Repetitive peak off-state current Repetitive peak reverse current

at VDRM at VRRM

125

80

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

16.3

kA

I2t

I2T for fusing coordination

1328

A2s*103

VTO

Threshold voltage

125

1.65

V

rT

On-stateslop resistance

0.36

mΩ

VTM

Peak on-state voltage

ITM=2400A, F=24kN

25

3.20

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM, to2000A

Gate pulse tr ≤0.5μs IGM=1.5A

125

1500

A/μs

Qrr

Recovery charge

ITM=1000A, tp=4000µs, di/dt=-20A/µs, VR=100V

125

87

100

µC

tq

Circuit commutated turn-off time

ITM=1000A, tp=4000µs, VR=100V dv/dt=30V/µs, di/dt=-20A/µs

125

12

28

µs

IGT

Gate trigger current

VA=12V, IA=1A

25

30

250

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

20

400

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

At 1800 sine, double side cooled Clamping force 24kN

0.020

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.005

Fm

Mounting force

19

26

kN

Tvj

Junction temperature

-40

125

。C

Tstg

Stored temperature

-40

140

。C

Wt

Weight

440

g

Outline

KT50cT