MTx800 MFx800 MT800,Thyristor/Diode Modules,Water Cooling

VDRM VRRM,

Type & Outline

800V

MTx800-08-414S3

MFx800-08-414S3

1000V

MTx800-10-414S3

MFx800-10-414S3

1200V

MTx800-12-414S3

MFx800-12-414S3

1400V

MTx800-14-414S3

MFx800-14-414S3

1600V

MTx800-16-414S3

MFx800-16-414S3

1800V

MTx800-18-414S3

MFx800-18-414S3

1800V

MT800-18-414S3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Single side cooled, Tc=55℃

125

800

A

IT(RMS)

RMS on-state current

180°half sine wave 50Hz

1256

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

120

mA

ITSM

Surge on-state current

10ms half sine wave, VR=0V

125

16

kA

I2t

I2t for fusing coordination

1280

A²s* 10³

VTO

Threshold voltage

135

0.80

V

rT

On-state slope resistance

0.26

mΩ

VTM

Peak on-state voltage

ITM= 1500A

25

1.45

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

tgd

Gate controlled delay time

IG= 1A dig/dt=1A/μs

25

4

μs

tq

Circuit commutated turn-off time

ITM=800A, tp=2000µs, VR =50V dv/dt=20V/µs ,di/dt=-10A/µs

125

250

µs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

250

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

10

300

mA

IL

Latching current

IA=1A IG= 1A dig/dt=1A/μs tg=30us

25

1500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.25

V

IGD

Non-trigger gate current

VDM=67%VDRM

125

5

mA

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.065

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.020

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M10)

10.0

12.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

2100

g

Outline

414S3