MTx600 MFx600 MT600,Thyristor/Diode Modules,Water Cooling

VRRM,VDRM

Type & Outline

600V

MTx600-06-406F3

MFx600-06-406F3

800V

MTx600-08-406F3

MFx600-08-406F3

1000V

MTx600-10-406F3

MFx600-10-406F3

1200V

MTx600-12-406F3

MFx600-12-406F3

1400V

MTx600-14-406F3

MFx600-14-406F3

1600V

MTx600-16-406F3

MFx600-16-406F3

1800V

MTx600-18-406F3

MFx600-18-406F3

1800V

MT600-18-406F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Single side cooled, THS=55。C

125

600

A

IT(RMS)

RMS on-state current

942

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

45

mA

ITSM

Surge on-state current

VR=60%VRRM,t=10ms half sine

125

16.0

kA

I2t

I2t for fusing coordination

125

1280

10³A²s

VTO

Threshold voltage

125

0.85

V

rT

On-state slope resistance

0.30

mΩ

VTM

Peak on-state voltage

ITM=1800A

25

1.90

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

IGT

Gate trigger current

VA=12V, IA=1A

25

30

200

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

10

200

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.20

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.085

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.040

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t=1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M12)

12

14

N·m

Mounting torque(M6)

4.5

6

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

1580

g

Outline

406F3