MTx500 MFx500 MT500,Thyristor/Diode Modules,Water Cooling

VRRM,VDRM

Type & Outline

2000V

MTx500-20-406F3

MFx500-20-406F3

2200V

MTx500-22-406F3

MFx500-22-406F3

2500V

MTx500-25-406F3

MFx500-25-406F3

2500V

MT500-25-406F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz

Single side cooled, THS=55℃

125

500

A

IT(RMS)

RMS on-state current

785

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

45

mA

ITSM

Surge on-state current

VR=60%VRRM, t=10ms half sine

125

13

kA

I2t

I2t for fusing coordination

125

845

10³A²s

VTO

Threshold voltage

125

0.87

V

rT

On-state slope resistance

0.60

mΩ

VTM

Peak on-state voltage

ITM=1500A

25

2.15

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

IGT

Gate trigger current

VA=12V, IA=1A

25

30

200

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

10

200

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.20

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.085

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.040

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t=1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M12)

12

14

N·m

Mounting torque(M6)

4.5

6

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

1580

g

Outline

406F3