MTx1500,MFx1500,Thyristor/Diode Modules,Air Cooling

VRRM,VDRM

Type & Outline

600V

800V

1000V

1200V

1400V

1600V

1800V

1800V

MTx1500-6-436F3

MTx1500-8-436F3

MTx1500-10-436F3

MTx1500-12-436F3

MTx1500-14-436F3

MTx1500-16-436F3

MTx1500-18-436F3

MT1500-18-436F3G

MFx1500-6-436F3

MFx1500-8-436F3

MFx1500-10-436F3

MFx1500-12-436F3

MFx1500-14-436F3

MFx1500-16-436F3

MFx1500-18-436F3

MTx stands for any type of MTC, MTA, MTK

MFx stands for any type of MFC, MFA, MFK

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Single side cooled, TC=70℃

125

1500

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

130

mA

ITSM

Surge on-state current

VR=60%VRRM, t=10ms half sine,

125

30

kA

I2t

I2t for fusing coordination

125

4500

10³A²s

VTO

Threshold voltage

125

0.80

V

rT

On-state slope resistance

0.14

mΩ

VTM

Peak on-state voltage

ITM=3000A

25

1.60

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

IGT

Gate trigger current

VA=12V, IA=1A

25

40

200

mA

VGT

Gate trigger voltage

1.0

3.0

V

IH

Holding current

20

200

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.20

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.025

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.018

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t=1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M16)

20

N·m

Mounting torque(M12)

14

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

6800

g

Outline

436F3