MTx1200 MFx1200,Thyristor/Diode Modules,Air Cooling

VRRM,VDRM

Type & Outline

600V

MTx1200-06-412F3

MFx1200-06-412F3

800V

MTx1200-08-412F3

MFx1200-08-412F3

1000V

MTx1200-10-412F3

MFx1200-10-412F3

1200V

MTx1200-12-412F3

MFx1200-12-412F3

1400V

MTx1200-14-412F3

MFx1200-14-412F3

1600V

MTx1200-16-412F3

MFx1200-16-412F3

1800V

MTx1200-18-412F3

MFx1200-18-412F3

1800V

MT1200-18-412F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Single side cooled, TC=60℃

125

1200

A

IT(RMS)

RMS on-state current

1884

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

55

mA

ITSM

Surge on-state current

VR=60%VRRM,,t=10ms half sine,

125

26

kA

I2t

I2t for fusing coordination

125

3380

10³A²s

VTO

Threshold voltage

125

0.70

V

rT

On-state slope resistance

0.14

mΩ

VTM

Peak on-state voltage

ITM=3000A

25

1.96

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

IGT

Gate trigger current

VA=12V, IA=1A

25

30

200

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

10

200

mA

IL

Latching current

1500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.20

V

Rth(j-c)

Thermal resistance Junction to case

At 180° sine. Single side cooled per chip

0.048

℃/W

Rth(c-h)

Thermal resistance case to heatsink

At 180° sine. Single side cooled per chip

0.020

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t=1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M12)

12.0

16.0

N·m

Mounting torque(M8)

10.0

12.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

3660

g

Outline

412F3