MTx1200 MFx1200 MT1200,Thyristor/Diode Modules,Water cooling

VRRM,VDRM

Type & Outline

600V

800V

1000V

1200V

1400V

1600V

1800V

1800V

MTx1200-06-411F3 MTx1200-08-411F3 MTx1200-10-411F3 MTx1200-12-411F3 MTx1200-14-411F3 MTx1200-16-411F3 MTx1200-18-411F3 MT1200-18-411F3G

MFx1200-06-411F3 MFx1200-08-411F3 MFx1200-10-411F3 MFx1200-12-411F3 MFx1200-14-411F3 MFx1200-16-411F3 MFx1200-18-411F3

MTx stands for any type of MTC, MTA, MTK

MFx stands for any type of MFC, MFA, MFK

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Single side cooled, THS=55℃

125

1200

A

IT(RMS)

RMS on-state current

1884

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

55

mA

ITSM

Surge on-state current

VR=60%VRRM, t=10ms half sine

125

26.0

kA

I²t

I2t for fusing coordination

125

3380

10³A²s

V_TO

Threshold voltage

125

0.83

V

r_T

On-state slope resistance

0.14

mΩ

V_TM

Peak on-state voltage

ITM=3000A

25

1.88

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

I_GT

Gate trigger current

VA= 12V, IA= 1A

25

30

200

mA

V_GT

Gate trigger voltage

0.8

3.0

V

I_H

Holding current

10

200

mA

I_L

Latching current

1000

mA

V_GD

Non-trigger gate voltage

VDM=67%VDRM

125

0.20

V

R_th(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.048

℃/W

R_th(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.018

℃/W

V_iso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M12)

12

16

N·m

Mounting torque(M8)

10

12

N·m

T_vj

Junction temperature

-40

125

℃

T_stg

Stored temperature

-40

125

℃

Wt

Weight

3230

g

Outline

411F3