MTx1000 MFx1000 MT1000,Thyristor/Diode Modules,Water cooling

VRRM,VDRM

Type & Outline

2000V

MTx1000-20-411F3

MFx1000-20-411F3

2200V

MTx1000-22-411F3

MFx1000-22-411F3

2500V

MTx1000-25-411F3

MFx1000-25-411F3

2500V

MT1000-25-411F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz

Single side cooled, THS=55℃

125

1000

A

IT(RMS)

RMS on-state current

1570

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

50

mA

ITSM

Surge on-state current

VR=60%VRRM, t=10ms half sine

125

18.0

kA

I2t

I2t for fusing coordination

125

1620

10³A²s

VTO

Threshold voltage

125

0.85

V

rT

On-state slope resistance

0.24

mΩ

VTM

Peak on-state voltage

ITM=3000A

25

2.20

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

200

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

10

200

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.20

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.048

。C/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.024

。C/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M12)

12

16

N·m

Mounting torque(M8)

10

12

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

3230

g

Outline

411F3