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Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC Collector Current @ TC=65oC |
4446 3600 |
A |
ICM |
Pulsed Collector Current tp=1ms |
7200 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
15.3 |
KW |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
3600 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
7200 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=3600A,VGE=15V, Tj=25oC |
|
2.00 |
2.45 |
V |
IC=3600A,VGE=15V, Tj=125oC |
|
2.40 |
|
|||
IC=3600A,VGE=15V, Tj=150oC |
|
2.50 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 144.0mA,VCE=VGE, Tj=25oC |
5.4 |
6.2 |
7.4 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.53 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
240 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
8.64 |
|
nF |
|
QG |
Gate Charge |
VGE=+15…+15V |
|
21.6 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=3600A, RG=0.5Ω,VGE=±15V, Tj=25oC |
|
660 |
|
ns |
tr |
Rise Time |
|
280 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1600 |
|
ns |
|
tf |
Fall Time |
|
175 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
650 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
1100 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=3600A, RG=0.5Ω,VGE=±15V, Tj=125oC |
|
740 |
|
ns |
tr |
Rise Time |
|
290 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1800 |
|
ns |
|
tf |
Fall Time |
|
315 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
800 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
1500 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=3600A, RG=0.5Ω,VGE=±15V, Tj=150oC |
|
780 |
|
ns |
tr |
Rise Time |
|
295 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1850 |
|
ns |
|
tf |
Fall Time |
|
395 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
900 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
1600 |
|
mJ |
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V |
|
14 |
|
KA |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward Voltage |
IF=3600A,VGE=0V,Tj=25oC |
|
1.80 |
2.25 |
V |
IF=3600A,VGE=0V,Tj=125oC |
|
1.95 |
|
|||
IF=3600A,VGE=0V,Tj= 150oC |
|
1.90 |
|
|||
Qr |
Recovered Charge |
VR=900V,IF=3600A, -di/dt= 12000A/μs,VGE=- 15V Tj=25oC |
|
730 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
2600 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
490 |
|
mJ |
|
Qr |
Recovered Charge |
VR=900V,IF=3600A, -di/dt= 12000A/μs,VGE=- 15V Tj=125oC |
|
1350 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
3150 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
950 |
|
mJ |
|
Qr |
Recovered Charge |
VR=900V,IF=3600A, -di/dt= 12000A/μs,VGE=- 15V Tj=150oC |
|
1550 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
3300 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
1100 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
6.0 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.12 |
|
mΩ |
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
9.8 16.3 |
K/kW |
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
6.5 10.7 4.0 |
|
K/kW |
M |
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6 |
1.8 8.0 4.25 |
|
2.1 10 5.75 |
N.m |
G |
Weight of Module |
|
2300 |
|
g |
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