MDC200,Welding Diode module,Air cooling

VRRM

Type & Outline

600V

800V

1000V

1200V

1400V

1600V

1800V

MDC200-06-229H3

MDC200-08-229H3

MDC200-10-229H3

MDC200-12-229H3

MDC200-14-229H3

MDC200-16-229H3

MDC200-18-229H3

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz

Single side cooled, TC=100℃

150

200

A

IF(RMS)

RMS forward current

314

A

IRRM

Repetitive peak current

at VRRM

150

12

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

4

kA

I2t

I2t for fusing coordination

92.5

10³A²s

VFO

Threshold voltage

150

0.78

V

rF

Forward slope resistance

1.10

mΩ

VFM

Peak forward voltage

IFM=600A

25

1.60

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.18

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.08

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min, Iiso:1mA(max)

3000

V

Fm

Terminal connection torque(M6)

4.5

6.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

165

g

Outline

229H3