MDC160 MD160

V_RSM

V_RRM

Type & Outline

900V

800V

MDx160-08-229H3

1100V

1000V

MDx160-10-229H3

1300V

1200V

MDx160-12-229H3

1500V

1400V

MDx160-14-229H3

1700V

1600V

MDx160-16-229H3

1900V

1800V

MDx160-18-229H3

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(°C)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180° half sine wave 50Hz Single side cooled, TC=100°C

150

160

A

IF(RMS)

RMS forward current

251

A

IRRM

Repetitive peak current

at VRRM

150

12

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

4

kA

I2t

I2t for fusing coordination

80

A2s*103

VFO

Threshold voltage

150

0.85

V

rF

Forward slope resistance

1.25

mΩ

VFM

Peak forward voltage

IFM=480A

25

1.50

V

Rth(j-c)

Thermal resistance

Junction to case

Single side cooled per chip

0.20

C /W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.08

C /W

Viso

Isolation voltage

50Hz,R.M.S,t=1min, Iiso:1mA(max)

3000

V

Fm

Terminal connection torque(M6)

4.5

6

N·m

Mounting torque(M6)

4.5

6

N·m

Tstg

Stored temperature

-40

125

°C

Wt

Weight

165

g

Outline

229H3