GD3600SGL170C4S,,IGBT Module,High current igbt module, STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

Collector Current @ TC=65oC

4446

3600

A

ICM

Pulsed Collector Current tp=1ms

7200

A

PD

Maximum Power Dissipation @ Tj=175oC

15.3

KW

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

3600

A

IFM

Diode Maximum Forward Current tp=1ms

7200

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

^oC

Tjop

Operating Junction Temperature

-40 to +150

^oC

TSTG

Storage Temperature Range

-40 to +125

^oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=3600A,VGE=15V, Tj=25oC

2.00

2.45

V

IC=3600A,VGE=15V, Tj=125oC

2.40

IC=3600A,VGE=15V, Tj=150oC

2.50

VGE(th)

Gate-Emitter Threshold Voltage

IC= 144.0mA,VCE=VGE, Tj=25oC

5.4

6.2

7.4

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.53

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

240

nF

Cres

Reverse Transfer

Capacitance

8.64

nF

QG

Gate Charge

VGE=+15…+15V

21.6

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=3600A, RG=0.5Ω,VGE=±15V, Tj=25oC

660

ns

tr

Rise Time

280

ns

td(off)

Turn-Off Delay Time

1600

ns

tf

Fall Time

175

ns

Eon

Turn-On Switching

Loss

650

mJ

Eoff

Turn-Off Switching

Loss

1100

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=3600A, RG=0.5Ω,VGE=±15V, Tj=125oC

740

ns

tr

Rise Time

290

ns

td(off)

Turn-Off Delay Time

1800

ns

tf

Fall Time

315

ns

Eon

Turn-On Switching

Loss

800

mJ

Eoff

Turn-Off Switching

Loss

1500

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=3600A, RG=0.5Ω,VGE=±15V, Tj=150oC

780

ns

tr

Rise Time

295

ns

td(off)

Turn-Off Delay Time

1850

ns

tf

Fall Time

395

ns

Eon

Turn-On Switching

Loss

900

mJ

Eoff

Turn-Off Switching

Loss

1600

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=1000V, VCEM≤1700V

14

KA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=3600A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=3600A,VGE=0V,Tj=125oC

1.95

IF=3600A,VGE=0V,Tj= 150oC

1.90

Qr

Recovered Charge

VR=900V,IF=3600A,

-di/dt= 12000A/μs,VGE=- 15V Tj=25oC

730

μC

IRM

Peak Reverse

Recovery Current

2600

A

Erec

Reverse Recovery Energy

490

mJ

Qr

Recovered Charge

VR=900V,IF=3600A,

-di/dt= 12000A/μs,VGE=- 15V Tj=125oC

1350

μC

IRM

Peak Reverse

Recovery Current

3150

A

Erec

Reverse Recovery Energy

950

mJ

Qr

Recovered Charge

VR=900V,IF=3600A,

-di/dt= 12000A/μs,VGE=- 15V Tj=150oC

1550

μC

IRM

Peak Reverse

Recovery Current

3300

A

Erec

Reverse Recovery Energy

1100

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

6.0

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.12

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

9.8

16.3

K/kW

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

6.5

10.7

4.0

K/kW

M

Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6

1.8

8.0

4.25

2.1

10

5.75

N.m

G

Weight of Module

2300

g