GD300TLT120E5S,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC= 100oC

540

300

A

ICM

Pulsed Collector Current tp=1ms

600

A

PD

Maximum Power Dissipation @ T =175oC

1948

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

300

A

IFM

Diode Maximum Forward Current tp=1ms

600

A

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

650

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC=80oC

415

300

A

ICM

Pulsed Collector Current tp=1ms

600

A

PD

Maximum Power Dissipation @ T =175oC

1086

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

650

V

IF

Diode Continuous Forward Current

300

A

IFM

Diode Maximum Forward Current tp=1ms

600

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=300A,VGE=15V, Tj=25oC

1.70

2.15

V

IC=300A,VGE=15V, Tj=125oC

2.00

IC=300A,VGE=15V, Tj=150oC

2.10

VGE(th)

Gate-Emitter Threshold Voltage

IC= 12.0mA,VCE=VGE, Tj=25oC

5.0

5.8

6.5

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

100

nA

RGint

Internal Gate Resistance

2.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

21.5

nF

Cres

Reverse Transfer

Capacitance

0.98

nF

QG

Gate Charge

VGE=- 15…+15V

2.80

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG=2.4Ω,

VGE=±15V, Tj=25oC

250

ns

tr

Rise Time

90

ns

td(off)

Turn-Off Delay Time

550

ns

tf

Fall Time

130

ns

Eon

Turn-On Switching

Loss

17.0

mJ

Eoff

Turn-Off Switching

Loss

29.5

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG=2.4Ω,

VGE=±15V, Tj= 125oC

300

ns

tr

Rise Time

100

ns

td(off)

Turn-Off Delay Time

650

ns

tf

Fall Time

180

ns

Eon

Turn-On Switching

Loss

25.0

mJ

Eoff

Turn-Off Switching

Loss

44.0

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG=2.4Ω,

VGE=±15V, Tj= 150oC

320

ns

tr

Rise Time

100

ns

td(off)

Turn-Off Delay Time

680

ns

tf

Fall Time

190

ns

Eon

Turn-On Switching

Loss

27.5

mJ

Eoff

Turn-Off Switching

Loss

48.5

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=900V, VCEM≤1200V

1200

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=300A,VGE=0V,Tj=25oC

1.65

2.10

V

IF=300A,VGE=0V,Tj= 125oC

1.65

IF=300A,VGE=0V,Tj= 150oC

1.65

Qr

Recovered

Charge

VR=600V,IF=300A,

-di/dt=6000A/μs,VGE=- 15V Tj=25oC

30.0

μC

IRM

Peak Reverse

Recovery Current

210

A

Erec

Reverse Recovery Energy

14.0

mJ

Qr

Recovered

Charge

VR=600V,IF=300A,

-di/dt=6000A/μs,VGE=- 15V Tj= 125oC

56.0

μC

IRM

Peak Reverse

Recovery Current

270

A

Erec

Reverse Recovery Energy

26.0

mJ

Qr

Recovered

Charge

VR=600V,IF=300A,

-di/dt=6000A/μs,VGE=- 15V Tj= 150oC

62.0

μC

IRM

Peak Reverse

Recovery Current

290

A

Erec

Reverse Recovery Energy

28.5

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=300A,VGE=15V, Tj=25oC

1.45

1.90

V

IC=300A,VGE=15V, Tj=125oC

1.60

IC=300A,VGE=15V, Tj=150oC

1.70

VGE(th)

Gate-Emitter Threshold Voltage

IC=4.8mA,VCE=VGE, Tj=25oC

5.1

5.8

6.4

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

1.0

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

18.5

nF

Cres

Reverse Transfer

Capacitance

0.55

nF

QG

Gate Charge

VGE=- 15V …+15V

3.22

μC

td(on)

Turn-On Delay Time

VCC=300V,IC=300A, RG=2.4Ω,

VGE=±15V, Tj=25oC

110

ns

tr

Rise Time

50

ns

td(off)

Turn-Off Delay Time

490

ns

tf

Fall Time

50

ns

Eon

Turn-On Switching

Loss

2.13

mJ

Eoff

Turn-Off Switching

Loss

9.83

mJ

td(on)

Turn-On Delay Time

VCC=300V,IC=300A, RG=2.4Ω,

VGE=±15V, Tj=125oC

120

ns

tr

Rise Time

60

ns

td(off)

Turn-Off Delay Time

520

ns

tf

Fall Time

70

ns

Eon

Turn-On Switching

Loss

3.10

mJ

Eoff

Turn-Off Switching

Loss

12.0

mJ

td(on)

Turn-On Delay Time

VCC=300V,IC=300A, RG=2.4Ω,

VGE=±15V, Tj=150oC

130

ns

tr

Rise Time

60

ns

td(off)

Turn-Off Delay Time

530

ns

tf

Fall Time

70

ns

Eon

Turn-On Switching

Loss

3.30

mJ

Eoff

Turn-Off Switching

Loss

12.5

mJ

ISC

SC Data

tP≤6μs,VGE=15V,

Tj=150oC,VCC=360V, VCEM≤650V

1500

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=300A,VGE=0V,Tj=25oC

1.55

2.00

V

IF=300A,VGE=0V,Tj= 125oC

1.50

IF=300A,VGE=0V,Tj= 150oC

1.45

Qr

Recovered

Charge

VR=300V,IF=300A,

-di/dt=6500A/μs,VGE=- 15V Tj=25oC

13.0

μC

IRM

Peak Reverse

Recovery Current

190

A

Erec

Reverse Recovery Energy

3.40

mJ

Qr

Recovered

Charge

VR=300V,IF=300A,

-di/dt=6500A/μs,VGE=- 15V Tj= 125oC

24.0

μC

IRM

Peak Reverse

Recovery Current

235

A

Erec

Reverse Recovery Energy

6.20

mJ

Qr

Recovered

Charge

VR=300V,IF=300A,

-di/dt=6500A/μs,VGE=- 15V Tj= 150oC

28.0

μC

IRM

Peak Reverse

Recovery Current

250

A

Erec

Reverse Recovery Energy

7.00

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

RthJC

Junction-to-Case (per T1,T2 IGBT)

Junction-to-Case (per D1,D2 Diode)

Junction-to-Case (per T3,T4 IGBT)

Junction-to-Case (per D3,D4 Diode)

0.077

0.141

0.138

0.237

K/W

RthCH

Case-to-Heatsink (per T1,T2 IGBT)

Case-to-Heatsink (per D1,D2 Diode)

Case-to-Heatsink (per T3,T4 IGBT)

Case-to-Heatsink (per D3,D4 Diode)

Case-to-Heatsink (per Module)

0.136

0.249

0.244

0.419

0.028

K/W

M

Mounting Torque, Screw M6

Terminal Connection Torque, Screw M5

3.0

2.5

6.0

5.0

N.m