DG120X07T2,IGBT discrete,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

650

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=135oC

240

120

A

ICM

Pulsed Collector Current tp limited by Tjmax

360

A

PD

Maximum Power Dissipation @ Tj=175oC

893

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

650

V

IF

Diode Continuous Forward Current @ TC=25oC @ TC=80oC

177

120

A

IFM

Diode Maximum Forward Current tp limited by Tjmax

360

A

Symbol

Description

Values

Unit

Tjop

Operating Junction Temperature

-40 to +175

oC

TSTG

Storage Temperature Range

-55 to +150

oC

TS

Soldering Temperature,1.6mm from case for 10s

260

oC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=120A,VGE=15V, Tj=25oC

1.40

1.85

V

IC=120A,VGE=15V, Tj=150oC

1.70

IC=120A,VGE=15V, Tj=175oC

1.75

VGE(th)

Gate-Emitter Threshold Voltage

IC=1.92mA,VCE=VGE, Tj=25oC

5.1

5.8

6.5

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25oC

250

uA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

200

nA

RGint

Internal Gate Resistance

/

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

14.1

nF

Cres

Reverse Transfer Capacitance

0.42

nF

QG

Gate Charge

VGE=-15 …+15V

0.86

uC

td(on)

Turn-On Delay Time

VCC=300V,IC=120A, RG=7.5Ω,

VGE=±15V, LS=40nH,Tj=25oC

68

ns

tr

Rise Time

201

ns

td(off)

Turn-Off Delay Time

166

ns

tf

Fall Time

54

ns

Eon

Turn-On Switching Loss

7.19

mJ

Eoff

Turn-Off Switching Loss

2.56

mJ

td(on)

Turn-On Delay Time

VCC=300V,IC=120A, RG=7.5Ω,

VGE=±15V, LS=40nH,Tj=150oC

70

ns

tr

Rise Time

207

ns

td(off)

Turn-Off Delay Time

186

ns

tf

Fall Time

106

ns

Eon

Turn-On Switching Loss

7.70

mJ

Eoff

Turn-Off Switching Loss

2.89

mJ

td(on)

Turn-On Delay Time

VCC=300V,IC=120A, RG=7.5Ω,

VGE=±15V, LS=40nH,Tj=175oC

71

ns

tr

Rise Time

211

ns

td(off)

Turn-Off Delay Time

195

ns

tf

Fall Time

139

ns

Eon

Turn-On Switching Loss

7.80

mJ

Eoff

Turn-Off Switching Loss

2.98

mJ

ISC

SC Data

tP≤6μs,VGE=15V,

Tj=150 oC,VCC=300V, VCEM≤650V

600

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=120A,VGE=0V,Tj=25oC

1.65

2.10

V

IF=120A,VGE=0V,Tj=150oC

1.60

IF=120A,VGE=0V,Tj=175oC

1.60

trr

Diode Reverse Recovery Time

VR=300V,IF=120A,

-di/dt=450A/μs,VGE=-15V LS=40nH,Tj=25oC

184

ns

Qr

Recovered Charge

1.65

μC

IRM

Peak Reverse

Recovery Current

17.2

A

Erec

Reverse Recovery Energy

0.23

mJ

trr

Diode Reverse Recovery Time

VR=300V,IF=120A,

-di/dt=450A/μs,VGE=-15V LS=40nH,Tj=150oC

221

ns

Qr

Recovered Charge

3.24

μC

IRM

Peak Reverse

Recovery Current

23.1

A

Erec

Reverse Recovery Energy

0.53

mJ

trr

Diode Reverse Recovery Time

VR=300V,IF=120A,

-di/dt=450A/μs,VGE=-15V LS=40nH,Tj=175oC

246

ns

Qr

Recovered Charge

3.98

μC

IRM

Peak Reverse

Recovery Current

26.8

A

Erec

Reverse Recovery Energy

0.64

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

RthJC

Junction-to-Case (per IGBT) Junction-to-Case (per Diode)

0.168 0.369

K/W

RthJA

Junction-to-Ambient

40

K/W