Modul IGBT 3300V

Simbol

Parameter

Kondisi pengujian

nilai

unit

VCES

Tegangan kolektor-emitter

VGE = 0V, TC = 25 °C

3300

V

VGES

Tegangan gerbang-emitter

TC= 25 °C

± 20

V

Ic

Arus kolektor-emitter

TC = 100 °C

250

A

IC ((PK)

Arus puncak kolektor

TP=1ms

500

A

Pmax

Maks. disipasi daya transistor

Tvj = 150°C, TC = 25 °C

2.6

kW

I2t

Dioda I2t

VR = 0V, tP = 10ms, Tvj = 150 °C

20

kA2s

Visol

Tegangan isolasi - per modul

( Terminal yang disatukan ke pelat dasar), AC RMS,1 menit, 50Hz, TC= 25 °C

6

kV

QPD

Pengeluaran parsial - per modul

IEC1287. V1 = 6900V, V2 = 5100V, 50Hz RMS

10

PC

Simbol

Parameter

Kondisi pengujian

Min.

- Tempel.

Maks.

unit

ICES

Arus pemotongan kolektor

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Listrik kebocoran gerbang

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Tegangan ambang gerbang

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (berada)

Penumpukan kolektor-emitter Tegangan

VGE = 15V, IC = 250A

2.50

2.80

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Dioda arus ke depan

DC

250

A

IFRM

Arus maju puncak dioda

TP = 1ms

500

A

VF(*1)

Tegangan dioda ke depan

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

Isc

Arus sirkuit pendek

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

ICES

Arus pemotongan kolektor

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Listrik kebocoran gerbang

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Tegangan ambang gerbang

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (berada)

Penumpukan kolektor-emitter

Tegangan

VGE = 15V, IC = 250A

2.50

2.80

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Dioda arus ke depan

DC

250

A

IFRM

Arus maju puncak dioda

TP = 1ms

500

A

VF(*1)

Tegangan dioda ke depan

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

Isc

Arus sirkuit pendek

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

td ((off)

Waktu penundaan pemutus

SayaC = 250A,

VCE = 1800V, VGE = ±15V, RG ((OFF) = 9.0Ω , CGE = 56nF,

LS = 150nH,

tvj= 25 °C

1480

n

tvj= 125 °C

1550

tvj= 150 °C

1570

tF

Waktu musim gugur

tvj= 25 °C

1280

n

tvj= 125 °C

1920

tvj= 150 °C

2120

EMATI

Kerugian energi saat mati

tvj= 25 °C

300

mJ

tvj= 125 °C

380

tvj= 150 °C

400

tD (on)

Waktu penundaan menyala

SayaC = 250A,

VCE = 1800V, VGE = ±15V, RG ((ON) = 6,0Ω , CGE = 56nF,

LS = 150nH,

tvj= 25 °C

640

n

tvj= 125 °C

650

tvj= 150 °C

650

tR

Waktu naik

tvj= 25 °C

220

n

tvj= 125 °C

235

tvj= 150 °C

238

EPADA

Energi menyala kerugian

tvj= 25 °C

395

mJ

tvj= 125 °C

510

tvj= 150 °C

565

QR

Dioda Terbalik

biaya pemulihan

SayaF = 250A,

VCE = 1800V,

- DSayaF/dt = 1200A/us, (tvj= 125 °C).

tvj= 25 °C

190

μC

tvj= 125 °C

295

tvj= 150 °C

335

SayaR

Dioda Terbalik

arus pemulihan

tvj= 25 °C

185

A

tvj= 125 °C

210

tvj= 150 °C

216

EREC

Dioda Terbalik

energi pemulihan

tvj= 25 °C

223

mJ

tvj= 125 °C

360

tvj= 150 °C

410