H50KSR,Bi-Directional Control Thyristor

IT(AV)

350A

VDRM,VRRM

5600V 6000V

6500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Double side cooled

TC=70。C

125

350

A

IT(RMS)F

RMS current(sine wave)

Sine wave 50Hz

Double side cooled

770

A

VDRM

Repetitive peak reverse voltage

tp=10ms

125

5600

6500

V

IDRM

Repetitive peak current

at VDRM

125

200

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

4.5

kA

I2t

I2t for fusing coordination

101

103A2s

VTO

Threshold voltage

125

1.25

V

rT

On-state slope resistance

2.20

mΩ

VTM

Peak on-state voltage

ITM=1000A, F=24kN

25

3.50

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

200

V/µs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM

Gate pulse tr ≤0.5μs IGM=1.5A Repetitive

125

100

A/µs

IGT

Gate trigger current

VA=12V, IA=1A

25

40

350

mA

VGT

Gate trigger voltage

0.8

3.5

V

IH

Holding current

20

400

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

Double side cooled Clamping force 24kN

0.045

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.008

Fm

Mounting force

19

26

kN

Tvj

Junction temperature

-40

125

。C

Tstg

Stored temperature

-40

140

。C

Wt

Weight

440

g

Outline

KS50dT