H150ZPU,Rectifier Diode

I_T(AV)

6500A

V_RRM

8100V 8300V

8500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC= 100℃

150

6500

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

8000

8500

V

IRRM

Repetitive peak current

At V_RRM

150

500

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6V_RRM

150

100

kA

I2t

I2t for fusing coordination

50000

10³A²s

VFO

Threshold voltage

150

0.800

V

rF

Forward slope resistance

0.125

mΩ

VFM

Peak forward voltage

IFM=5000A, F= 140kN

25

1.50

V

Qrr

Recovery charge

IFM=2000A, tp=4000μs, di/dt=-20A/μs, VR= 100V

14000

μC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 24kN

0.0028

℃ /W

Rth(c-h)

Thermal resistance case to heat sink

0.0006

Fm

Mounting force

165

190

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

4000

g

Outline

ZT140dT