H100ZPU,Rectifier Diode

I_T(AV)

3300A

V_RRM

8000V 8500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled

TC= 100℃

150

3300

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

8000

8500

V

IRRM

Repetitive peak current

at VRRM tp= 10ms

150

300

mA

IFSM

Surge forward current

10ms half sine wave. VR=0.6VRRM

150

50

kA

I2t

I2t for fusing coordination

12500

10³A²s

VFO

Threshold voltage

150

0.96

V

rF

Forward slope resistance

0.24

mΩ

VFM

Peak forward voltage

IFM=5000A, F= 100kN

25

2.10

V

Qrr

Recovery charge

IFM=2000A, tp=4000μs, di/dt=-20A/μs, VR= 100V

150

23500

μC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine. double side cooled Clamping force 100kN

0.005

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

0.0015

Fm

Mounting force

98

113

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

2500

g

Outline

ZT100dT