GD900SGY120C2S,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC= 100oC

1410

900

A

ICM

Pulsed Collector Current tp=1ms

1800

A

PD

Maximum Power Dissipation @ T =175oC

5000

W

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=900A,VGE=15V, Tj=25oC

1.80

2.25

V

IC=900A,VGE=15V, Tj=125oC

2.10

IC=900A,VGE=15V, Tj=150oC

2.15

VGE(th)

Gate-Emitter Threshold Voltage

IC=22.5mA,VCE=VGE, Tj=25oC

5.2

6.0

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.6

Ω

QG

Gate Charge

VGE=- 15V…+15V

7.40

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=900A,

RGon= 1.5Ω,RGoff=0.9Ω, VGE=±15V,Tj=25oC

257

ns

tr

Rise Time

96

ns

td(off)

Turn-Off Delay Time

628

ns

tf

Fall Time

103

ns

Eon

Turn-On Switching

Loss

43

mJ

Eoff

Turn-Off Switching

Loss

82

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=900A,

RGon= 1.5Ω,RGoff=0.9Ω,

VGE=±15V,Tj= 125oC

268

ns

tr

Rise Time

107

ns

td(off)

Turn-Off Delay Time

659

ns

tf

Fall Time

144

ns

Eon

Turn-On Switching

Loss

59

mJ

Eoff

Turn-Off Switching

Loss

118

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=900A,

RGon= 1.5Ω,RGoff=0.9Ω,

VGE=±15V,Tj= 150oC

278

ns

tr

Rise Time

118

ns

td(off)

Turn-Off Delay Time

680

ns

tf

Fall Time

155

ns

Eon

Turn-On Switching

Loss

64

mJ

Eoff

Turn-Off Switching

Loss

134

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=800V,

VCEM≤1200V

3600

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=900A,VGE=0V,Tj=25oC

1.71

2.16

V

IF=900A,VGE=0V,Tj= 125oC

1.74

IF=900A,VGE=0V,Tj= 150oC

1.75

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=6000A/μs,VGE=- 15V Tj=25oC

76

μC

IRM

Peak Reverse

Recovery Current

513

A

Erec

Reverse Recovery Energy

38.0

mJ

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=6000A/μs,VGE=- 15V Tj= 125oC

143

μC

IRM

Peak Reverse

Recovery Current

684

A

Erec

Reverse Recovery Energy

71.3

mJ

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=6000A/μs,VGE=- 15V Tj= 150oC

171

μC

IRM

Peak Reverse

Recovery Current

713

A

Erec

Reverse Recovery Energy

80.8

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.18

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.030

0.052

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.016

0.027

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g