GD900HFX120P1SA,IGBT Module,STARPOWER

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC= 100oC

1522

900

A

ICM

Pulsed Collector Current tp=1ms

1800

A

PD

Maximum Power Dissipation @ Tj=175oC

5.24

kW

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

900

A

IFM

Diode Maximum Forward Current tp=1ms

1800

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=900A,VGE=15V, Tj=25oC

1.70

2.15

V

IC=900A,VGE=15V, Tj=125oC

1.95

IC=900A,VGE=15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC=22.5mA,VCE=VGE, Tj=25oC

5.2

6.0

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.63

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

93.2

nF

Cres

Reverse Transfer

Capacitance

2.61

nF

QG

Gate Charge

VGE=-15 ﹍+15V

6.99

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=900A, RG=1.6Ω,

VGE=±15V, Tj=25oC

214

ns

tr

Rise Time

150

ns

td(off)

Turn-Off Delay Time

721

ns

tf

Fall Time

206

ns

Eon

Turn-On Switching

Loss

76

mJ

Eoff

Turn-Off Switching

Loss

128

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=900A, RG=1.6Ω,

VGE=±15V, Tj=125oC

235

ns

tr

Rise Time

161

ns

td(off)

Turn-Off Delay Time

824

ns

tf

Fall Time

412

ns

Eon

Turn-On Switching

Loss

107

mJ

Eoff

Turn-Off Switching

Loss

165

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=900A, RG=1.6Ω,

VGE=±15V, Tj=150oC

235

ns

tr

Rise Time

161

ns

td(off)

Turn-Off Delay Time

876

ns

tf

Fall Time

464

ns

Eon

Turn-On Switching

Loss

112

mJ

Eoff

Turn-Off Switching

Loss

180

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=900V, VCEM≤1200V

3600

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=900A,VGE=0V,Tj=25oC

1.90

2.25

V

IF=900A,VGE=0V,Tj= 125oC

1.85

IF=900A,VGE=0V,Tj= 150oC

1.80

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=4800A/μs,VGE=-15V Tj=25oC

86

μC

IRM

Peak Reverse

Recovery Current

475

A

Erec

Reverse Recovery Energy

36.1

mJ

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=4800A/μs,VGE=-15V Tj= 125oC

143

μC

IRM

Peak Reverse

Recovery Current

618

A

Erec

Reverse Recovery Energy

71.3

mJ

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=4800A/μs,VGE=-15V Tj= 150oC

185

μC

IRM

Peak Reverse

Recovery Current

665

A

Erec

Reverse Recovery Energy

75.1

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

ΔR/R

Deviation of R100

TC= 100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

K

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

18

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.30

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

28.6

51.9

K/kW

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

14.0

25.3

4.5

K/kW

M

Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M5

1.8

8.0

3.0

2.1

10

6.0

N.m

G

Weight of Module

825

g