All Categories

IGBT Module 1200V

IGBT Module 1200V

Home /  Products /  IGBT module /  IGBT Module 1200V

GD800SGT120C2S_G8,IGBT Module,STARPOWER

IGBT Module,1200V 800A

Brand:
STARPOWER
Spu:
GD800SGT120C2S_G8
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module, produced by STARPOWER. 1200V 800A.

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±30

V

IC

Collector Current @ TC=25oC

@ TC= 100oC

1250

800

A

ICM

Pulsed Collector Current tp= 1ms

1600

A

PD

Maximum Power Dissipation @ Tj=175oC

4166

W

Diode

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

800

A

IFM

Diode Maximum Forward Current tp=1ms

1600

A

Module

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=800A,VGE= 15V, Tj=25oC

1.70

2.15

V

IC=800A,VGE= 15V, Tj=125oC

1.95

IC=800A,VGE= 15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC=32.0mA,VCE=VGE, Tj=25oC

5.0

5.7

6.5

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.13

Ω

Cies

Input Capacitance

VCE=30V,f=1MHz,

VGE=0V

79.2

nF

Cres

Reverse Transfer

Capacitance

2.40

nF

QG

Gate Charge

VGE= 15V

4.80

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, RG= 1.0Ω,

VGE=±15V, Tj=25oC

408

ns

tr

Rise Time

119

ns

td(off)

Turn-Off Delay Time

573

ns

tf

Fall Time

135

ns

Eon

Turn-On Switching

Loss

21.0

mJ

Eoff

Turn-Off Switching

Loss

72.4

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, RG= 1.0Ω,

VGE=±15V, Tj= 125oC

409

ns

tr

Rise Time

120

ns

td(off)

Turn-Off Delay Time

632

ns

tf

Fall Time

188

ns

Eon

Turn-On Switching

Loss

26.4

mJ

Eoff

Turn-Off Switching

Loss

107

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, RG= 1.0Ω,

VGE=±15V, Tj= 150oC

410

ns

tr

Rise Time

123

ns

td(off)

Turn-Off Delay Time

638

ns

tf

Fall Time

198

ns

Eon

Turn-On Switching

Loss

28.8

mJ

Eoff

Turn-Off Switching

Loss

112

mJ

ISC

SC Data

tP≤10μs,VGE= 15V,

Tj=150oC,VCC=900V, VCEM≤1200V

3200

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=800A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=800A,VGE=0V,Tj= 125oC

1.85

IF=800A,VGE=0V,Tj= 150oC

1.85

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=6700A/μs,

VGE=- 15V Tj=25oC

81.0

μC

IRM

Peak Reverse

Recovery Current

518

A

Erec

Reverse Recovery Energy

39.4

mJ

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=6700A/μs,

VGE=- 15V Tj= 125oC

136

μC

IRM

Peak Reverse

Recovery Current

646

A

Erec

Reverse Recovery Energy

65.2

mJ

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=6700A/μs,VGE=- 15V Tj= 150oC

155

μC

IRM

Peak Reverse

Recovery Current

684

A

Erec

Reverse Recovery Energy

76.6

mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.18

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.036

0.048

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.123

0.163

0.035

K/W

M

Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

1.1

2.5

3.0

2.0

5.0

5.0

N.m

G

Weight of Module

300

g

Outline

image(6b521639e0).png

Get a Free Quote

Our representative will contact you soon.
Email
Name
Company Name
Message
0/1000

RELATED PRODUCT

Have questions about any products?

Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.

Get a Quote

Get a Free Quote

Our representative will contact you soon.
Email
Name
Company Name
Message
0/1000