Home / Products / IGBT module / 1200V
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD800HFT120C3S |
Units |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
1400 800 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
1600 |
A |
|
IF |
Diode Continuous Forward Current @ TC=80℃ |
800 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
1600 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175℃ |
4.2 |
kW |
|
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
|
Mounting Torque |
Signal Terminal Screw:M4 |
1.8 to 2.1 |
|
|
Power Terminal Screw:M8 |
8.0 to 10 |
N.m |
|
|
Mounting Screw:M6 |
4.25 to 5.75 |
|
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=32.0mA,VCE=VGE, Tj=25℃ |
5.0 |
5.8 |
6.5 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=800A,VGE=15V, Tj=25℃ |
|
1.70 |
2.15 |
V |
|
IC=800A,VGE=15V, Tj=125℃ |
|
2.00 |
|
Switching Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A, RGon=3.3Ω, RGoff=0.39Ω, VGE=±15V,Tj=25℃ |
|
605 |
|
ns |
|
tr |
Rise Time |
|
225 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
830 |
|
ns |
|
|
tf |
Fall Time |
|
155 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
/ |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
/ |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A, RGon=3.3Ω, RGoff=0.39Ω, VGE=±15V,Tj=125℃ |
|
670 |
|
ns |
|
tr |
Rise Time |
|
220 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
960 |
|
ns |
|
|
tf |
Fall Time |
|
175 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
161 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
124 |
|
mJ |
|
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
57.7 |
|
nF |
|
Coes |
Output Capacitance |
|
3.02 |
|
nF |
|
|
Cres |
Reverse Transfer Capacitance |
|
2.62 |
|
nF |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
3200 |
|
A |
|
RGint |
Internal Gate Resistance |
|
|
1.25 |
|
Ω |
|
LCE |
Stray Inductance |
|
|
20 |
|
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal To Chip |
|
|
0.18 |
|
mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
|
VF |
Diode Forward Voltage |
IF=800A |
Tj=25℃ |
|
1.65 |
2.10 |
V |
|
Tj=125℃ |
|
1.65 |
|
||||
|
Qr |
Recovered Charge |
IF=800A, VR=600V, RGon=0.9Ω, VGE=-15V |
Tj=25℃ |
|
86 |
|
μC |
|
Tj=125℃ |
|
160 |
|
||||
|
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
560 |
|
A |
|
|
Tj=125℃ |
|
720 |
|
||||
|
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
38.0 |
|
mJ |
|
|
Tj=125℃ |
|
70.0 |
|
||||
Thermal Characteristics
|
Symbol |
Parameter |
Typ. |
Max. |
Units |
|
RθJC |
Junction-to-Case (per IGBT) |
|
35.6 |
K/kW |
|
RθJC |
Junction-to-Case (per DIODE) |
|
62.0 |
K/kW |
|
RθCS |
Case-to-Sink (Conductive grease applied) |
6 |
|
K/kW |
|
Weight |
Weight Module |
1500 |
|
g |
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