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GD800HFL170C3S

IGBT Module,1700V 800A

Brand:
STARPOWER
  • Introduction
Introduction

Features

  • Low VCE(sat)  SPT+ IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • High Power Converters
  • Motor Drivers
  • Wind Turbines

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

 

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC=80oC

1050

800

A

ICM

Pulsed Collector Current  tp=1ms

1600

A

PD

Maximum Power Dissipation  @ Tj=175oC

4.85

kW

Diode

 

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

800

A

IFM

Diode Maximum Forward Current  tp=1ms

1600

A

Module

 

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

 

VCE(sat)

 

 

Collector to Emitter

Saturation Voltage

IC=800A,VGE=15V, Tj=25oC

 

2.50

2.95

 

 

V

IC=800A,VGE=15V, Tj=125oC

 

3.00

 

IC=800A,VGE=15V, Tj=150oC

 

3.10

 

VGE(th)

Gate-Emitter Threshold Voltage

IC=32.0mA,VCE=VGE, Tj=25oC

5.4

 

7.4

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

 

 

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

 

 

400

nA

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

 

54.0

 

nF

Cres

Reverse Transfer

Capacitance

 

1.84

 

nF

QG

Gate Charge

VGE=- 15…+15V

 

6.2

 

μC

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=800A,  RG= 1.5Ω,

VGE=±15V, Tj=25oC

 

235

 

ns

tr

Rise Time

 

110

 

ns

td(off)

Turn-Off Delay Time

 

390

 

ns

tf

Fall Time

 

145

 

ns

Eon

Turn-On Switching

Loss

 

216

 

mJ

Eoff

Turn-Off Switching

Loss

 

152

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=800A,  RG= 1.5Ω,

VGE=±15V, Tj= 125oC

 

250

 

ns

tr

Rise Time

 

120

 

ns

td(off)

Turn-Off Delay Time

 

475

 

ns

tf

Fall Time

 

155

 

ns

Eon

Turn-On Switching

Loss

 

280

 

mJ

Eoff

Turn-Off Switching

Loss

 

232

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=800A,  

RG= 1.5Ω,

VGE=±15V, Tj= 150oC

 

254

 

ns

tr

Rise Time

 

125

 

ns

td(off)

Turn-Off Delay Time

 

500

 

ns

tf

Fall Time

 

160

 

ns

Eon

Turn-On Switching

Loss

 

312

 

mJ

Eoff

Turn-Off Switching

Loss

 

256

 

mJ

 

ISC

 

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC= 1000V, VCEM≤1700V

 

 

2480

 

 

A

 

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

VF

Diode Forward

Voltage

IF=800A,VGE=0V, Tj=25oC

 

1.80

2.25

 

V

IF=800A,VGE=0V, Tj= 125oC

 

1.95

 

IF=800A,VGE=0V, Tj= 150oC

 

1.90

 

Qr

Recovered Charge

VCC=900V,IF=800A,

-di/dt=8400A/μs,VGE=±15V, Tj=25oC

 

232

 

μC

IRM

Peak Reverse

Recovery Current

 

720

 

A

Erec

Reverse Recovery Energy

 

134

 

mJ

Qr

Recovered Charge

VCC=900V,IF=800A,

-di/dt=8400A/μs,VGE=±15V, Tj= 125oC

 

360

 

μC

IRM

Peak Reverse

Recovery Current

 

840

 

A

Erec

Reverse Recovery Energy

 

222

 

mJ

Qr

Recovered Charge

VCC=900V,IF=800A,

-di/dt=8400A/μs,VGE=±15V, Tj= 150oC

 

424

 

μC

IRM

Peak Reverse

Recovery Current

 

880

 

A

Erec

Reverse Recovery Energy

 

259

 

mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

 

20

 

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

 

0.37

 

RθJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

 

 

30.9

49.0

K/kW

RθCS

Case-to-Sink (per IGBT)

Case-to-Sink (per Diode)

 

19.6

31.0

 

K/kW

RθCS

Case-to-Sink

 

6.0

 

K/kW

 

M

Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6

1.8

8.0

4.25

 

2.1

10

5.75

 

N.m

G

Weight of Module

 

1500

 

g

 

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