GD800HFA120C6SD

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=100oC

800

A

ICM

Pulsed Collector Current  tp=1ms

1600

A

PD

Maximum Power Dissipation  @ Tvj=175oC

4687

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

900

A

IFM

Diode Maximum Forward Current  tp=1ms

1800

A

IFSM

Surge Forward Current  tp=10ms  @ Tvj=125oC @ Tvj=175oC

2392

2448

A

I2t

I2t-value,tp=10ms  @ Tvj=125oC @ Tvj=175oC

28608

29964

A2s

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=800A,VGE=15V, Tvj=25oC

1.40

1.85

V

IC=800A,VGE=15V, Tvj=125oC

1.60

IC=800A,VGE=15V, Tvj=175oC

1.60

VGE(th)

Gate-Emitter Threshold Voltage

IC=24.0mA,VCE=VGE, Tvj=25oC

5.5

6.3

7.0

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

0.5

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

28.4

nF

Cres

Reverse Transfer Capacitance

0.15

nF

QG

Gate Charge

VGE=-15…+15V

2.05

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, RG=0.5Ω, LS=40nH, VGE=-8V/+15V,

Tvj=25oC

168

ns

tr

Rise Time

78

ns

td(off)

Turn-Off Delay Time

428

ns

tf

Fall Time

123

ns

Eon

Turn-On Switching Loss

43.4

mJ

Eoff

Turn-Off Switching Loss

77.0

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, 

RG=0.5Ω, LS=40nH,

 VGE=-8V/+15V,

Tvj=125oC

172

ns

tr

Rise Time

84

ns

td(off)

Turn-Off Delay Time

502

ns

tf

Fall Time

206

ns

Eon

Turn-On Switching Loss

86.3

mJ

Eoff

Turn-Off Switching Loss

99.1

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A,

 RG=0.5Ω, LS=40nH, 

VGE=-8V/+15V,

Tvj=175oC

174

ns

tr

Rise Time

90

ns

td(off)

Turn-Off Delay Time

531

ns

tf

Fall Time

257

ns

Eon

Turn-On Switching Loss

99.8

mJ

Eoff

Turn-Off Switching Loss

105

mJ

ISC

SC Data

tP≤8μs,VGE=15V,

Tvj=150oC,

VCC=800V, VCEM ≤1200V

2600

A

tP≤6μs,VGE=15V,

Tvj=175oC,

VCC=800V, VCEM ≤1200V

2500

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward Voltage

IF=900A,VGE=0V,Tvj=25oC

1.60

2.00

V

IF=900A,VGE=0V,Tvj=125oC

1.60

IF=900A,VGE=0V,Tvj=175oC

1.50

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=7778A/μs,VGE=-8V, LS=40nH,Tvj=25oC

47.7

μC

IRM

Peak Reverse

Recovery Current

400

A

Erec

Reverse Recovery Energy

13.6

mJ

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=7017A/μs,VGE=-8V, LS=40nH,Tvj=125oC

82.7

μC

IRM

Peak Reverse

Recovery Current

401

A

Erec

Reverse Recovery Energy

26.5

mJ

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=6380A/μs,VGE=-8V, LS=40nH,Tvj=175oC

110

μC

IRM

Peak Reverse

Recovery Current

413

A

Erec

Reverse Recovery Energy

34.8

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2- 1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2- 1/(298.15K))]

3433

K