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Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD630HFL120C2S |
Units |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
945 |
A |
|
630 |
|||
|
ICM(1) |
Pulsed Collector Current tp=1ms |
1260 |
A |
|
IF |
Diode Continuous Forward Current @ TC=80℃ |
630 |
A |
|
IFM |
Diode Maximum Forward Current |
1260 |
A |
|
PD |
Maximum Power Dissipation @ Tj= 150℃ |
4167 |
W |
|
Tjmax |
Maximum Junction Temperature |
150 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
|
Mounting Torque |
Power Terminal Screw:M6 Mounting Screw:M6 |
2.5 to 5.0 3.0 to 5.0 |
N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 16.0mA,VCE=VGE, Tj=25℃ |
5.0 |
6.2 |
7.0 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=630A,VGE=15V, Tj=25℃ |
|
2.35 |
2.80 |
V |
|
IC=630A,VGE=15V, Tj= 125℃ |
|
2.73 |
|
Switching Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=630A, RG=2.5Ω,VGE=±15V, Tj=25℃ |
|
210 |
|
ns |
|
tr |
Rise Time |
|
102 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
600 |
|
ns |
|
|
tf |
Fall Time |
|
80 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
75.2 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
37.8 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=630A, RG=2.5Ω,VGE=±15V, Tj= 125℃ |
|
230 |
|
ns |
|
tr |
Rise Time |
|
103 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
705 |
|
ns |
|
|
tf |
Fall Time |
|
103 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
102.9 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
63.0 |
|
mJ |
|
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
29.7 |
|
nF |
|
Coes |
Output Capacitance |
|
2.08 |
|
nF |
|
|
Cres |
Reverse Transfer Capacitance |
|
1.36 |
|
nF |
|
|
ISC |
SC Data |
tSC≤10μs,VGE=15V, Tj= 125℃,VCC=600V, VCEM≤1200V |
|
1800 |
|
A |
|
RGint |
Internal Gate Resistance |
|
|
0.5 |
|
Ω |
|
LCE |
Stray Inductance |
|
|
|
18 |
nH |
|
RCC’+EE ’ |
Module Lead Resistance, Terminal to Chip |
TC=25℃ |
|
0.32 |
|
mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
|
VF |
Diode Forward Voltage |
IF=630A |
Tj=25℃ |
|
2.00 |
2.40 |
V |
|
Tj= 125℃ |
|
2.20 |
|
||||
|
Qr |
Recovered Charge |
IF=630A, VR=600V, RG=2.5Ω, VGE=- 15V |
Tj=25℃ |
|
80 |
|
μC |
|
Tj= 125℃ |
|
130 |
|
||||
|
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
336 |
|
A |
|
|
Tj= 125℃ |
|
433 |
|
||||
|
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
24.4 |
|
mJ |
|
|
Tj= 125℃ |
|
49.6 |
|
||||
Thermal Characteristics
|
Symbol |
Parameter |
Typ. |
Max. |
Units |
|
RθJC |
Junction-to-Case (per IGBT) |
|
0.030 |
K/W |
|
RθJC |
Junction-to-Case (per DIODE) |
|
0.048 |
K/W |
|
RθCS |
Case-to-Sink (Conductive grease applied) |
0.035 |
|
K/W |
|
Weight |
Weight of Module |
340 |
|
g |
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