Home / Products / IGBT module / 1200V
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC=70oC |
830 600 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
|
PD |
Maximum Power Dissipation @ Tj=150oC |
4032 |
W |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current |
600 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
150 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +125 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=600A,VGE=15V, Tj=25oC |
|
2.90 |
3.35 |
V |
|
IC=600A,VGE=15V, Tj=125oC |
|
3.60 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=6.0mA,VCE=VGE, Tj=25oC |
5.0 |
5.8 |
6.6 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
0.25 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
39.0 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
2.55 |
|
nF |
|
|
QG |
Gate Charge |
VGE=- 15…+15V |
|
6.30 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG= 1. 1Ω, VGE=±15V, Tj=25oC |
|
205 |
|
ns |
|
tr |
Rise Time |
|
50 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
265 |
|
ns |
|
|
tf |
Fall Time |
|
140 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
50.4 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
20.0 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG= 1. 1Ω, VGE=±15V, Tj= 125oC |
|
210 |
|
ns |
|
tr |
Rise Time |
|
55 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
275 |
|
ns |
|
|
tf |
Fall Time |
|
175 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
66.0 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
28.9 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=125oC,VCC=900V, VCEM≤1200V |
|
3900 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=600A,VGE=0V,Tj=25oC |
|
2.25 |
2.70 |
V |
|
IF=600A,VGE=0V,Tj= 125oC |
|
2.35 |
|
|||
|
Qr |
Recovered Charge |
VCC=600V,IF=600A, -di/dt= 12kA/μs,VGE=±15V, Tj=25oC |
|
42.0 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
492 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
16.6 |
|
mJ |
|
|
Qr |
Recovered Charge |
VCC=600V,IF=600A, -di/dt= 12kA/μs,VGE=±15V, Tj= 125oC |
|
80.4 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
672 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
37.9 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
LCE |
Stray Inductance |
|
|
20 |
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.18 |
|
mΩ |
|
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.031 0.070 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.051 0.114 0.035 |
|
K/W |
|
M |
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
1.1 2.5 3.0 |
|
2.0 5.0 5.0 |
N.m |
|
G |
Weight of Module |
|
300 |
|
g |
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