GD600HTA120P6HT

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

ICN

Implemented Collector Current

600

A

IC

Collector Current  @ TF=85oC

450

A

ICM

Pulsed Collector Current  tp=1ms

1200

A

PD

Maximum Power Dissipation @ TF=75oC Tj=175oC

970

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IFN

Implemented Collector Current

600

A

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current  tp=1ms

1200

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature continuous

For   10s   within   a   period   of   30s,occurrence maximum 3000 times over lifetime

-40 to +150  

+150 to +175

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

2500

V

DCreep

Terminal to Heatsink Terminal to Terminal

9.0 9.0

mm

DClear

Terminal to Heatsink Terminal to Terminal

4.5 4.5

mm

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

ICN

Implemented Collector Current

600

A

IC

Collector Current  @ TF=85oC

450

A

ICM

Pulsed Collector Current  tp=1ms

1200

A

PD

Maximum Power Dissipation @ TF=75oC Tj=175oC

970

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IFN

Implemented Collector Current

600

A

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current  tp=1ms

1200

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature continuous

For   10s   within   a   period   of   30s,occurrence maximum 3000 times over lifetime

-40 to +150  

+150 to +175

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

2500

V

DCreep

Terminal to Heatsink Terminal to Terminal

9.0 9.0

mm

DClear

Terminal to Heatsink Terminal to Terminal

4.5 4.5

mm

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=450A,VGE=15V, Tj=25oC

1.40

V

IC=450A,VGE=15V, Tj=150oC

1.65

IC=450A,VGE=15V, Tj=175oC

1.70

IC=600A,VGE=15V, Tj=25oC

1.60

IC=600A,VGE=15V, Tj=150oC

1.90

IC=600A,VGE=15V, Tj=175oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC=15.6mA,VCE=VGE, Tj=25oC

6.4

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

1.67

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

81.2

nF

Coes

Output Capacitance

1.56

nF

Cres

Reverse Transfer Capacitance

0.53

nF

QG

Gate Charge

VCE =600V,IC =600A, VGE=-8…+15V

5.34

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=600A,

RGon=1.0Ω,RGoff=2.2Ω, LS=22nH,

VGE=-8V/+15V, Tj=25oC

290

ns

tr

Rise Time

81

ns

td(off)

Turn-Off Delay Time

895

ns

tf

Fall Time

87

ns

Eon

Turn-On Switching Loss

53.5

mJ

Eoff

Turn-Off Switching Loss

47.5

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=600A,

RGon=1.0Ω,RGoff=2.2Ω, LS=22nH,

VGE=-8V/+15V, Tj=150oC

322

ns

tr

Rise Time

103

ns

td(off)

Turn-Off Delay Time

1017

ns

tf

Fall Time

171

ns

Eon

Turn-On Switching Loss

84.2

mJ

Eoff

Turn-Off Switching Loss

63.7

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=600A,

RGon=1.0Ω,RGoff=2.2Ω, LS=22nH,

VGE=-8V/+15V, Tj=175oC

334

ns

tr

Rise Time

104

ns

td(off)

Turn-Off Delay Time

1048

ns

tf

Fall Time

187

ns

Eon

Turn-On Switching Loss

89.8

mJ

Eoff

Turn-Off Switching Loss

65.4

mJ

ISC

SC Data

tP≤6μs,VGE=15V,

Tj=175oC,VCC=800V, VCEM≤1200V

2000

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=450A,VGE=0V,Tj=25oC

1.80

V

IF=450A,VGE=0V,Tj=150oC

1.75

IF=450A,VGE=0V,Tj=175oC

1.70

IF=600A,VGE=0V,Tj=25oC

1.95

IF=600A,VGE=0V,Tj=150oC

1.95

IF=600A,VGE=0V,Tj=175oC

1.90

Qr

Recovered Charge

VR=600V,IF=600A,

-di/dt=7040A/μs,VGE=-8V LS=22nH,Tj=25oC

22.5

μC

IRM

Peak Reverse

Recovery Current

304

A

Erec

Reverse Recovery Energy

10.8

mJ

Qr

Recovered Charge

VR=600V,IF=600A,

-di/dt=5790A/μs,VGE=-8V LS=22nH,Tj=150oC

46.6

μC

IRM

Peak Reverse

Recovery Current

336

A

Erec

Reverse Recovery Energy

18.2

mJ

Qr

Recovered Charge

VR=600V,IF=600A,

-di/dt=5520A/μs,VGE=-8V LS=22nH,Tj=175oC

49.8

μC

IRM

Peak Reverse

Recovery Current

346

A

Erec

Reverse Recovery Energy

19.8

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2- 1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2- 1/(298.15K))]

3433

K

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

8

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.75

mΩ

△p

△V/△t=10.0dm3/min,TF=75oC

64

mbar

p

Maximum Pressure In Cooling Circuit

2.5

bar

RthJF

Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC

0.103 0.140

K/W

M

Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4

3.6 1.8

4.4 2.2

N.m

G

Weight of Module

750

g