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Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC= 100oC |
1090 600 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
3947 |
W |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current |
600 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=600A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V |
|
IC=600A,VGE=15V, Tj=125oC |
|
1.90 |
|
|||
|
IC=600A,VGE=15V, Tj=150oC |
|
1.95 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24.0mA,VCE=VGE, Tj=25oC |
5.2 |
5.8 |
6.4 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
0.7 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
62.1 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
1.74 |
|
nF |
|
|
QG |
Gate Charge |
VGE=- 15…+15V |
|
4.62 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.5Ω,VGE=±15V, Tj=25oC |
|
136 |
|
ns |
|
tr |
Rise Time |
|
77 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
494 |
|
ns |
|
|
tf |
Fall Time |
|
72 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
53.1 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
48.4 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.5Ω,VGE=±15V, Tj=125oC |
|
179 |
|
ns |
|
tr |
Rise Time |
|
77 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
628 |
|
ns |
|
|
tf |
Fall Time |
|
113 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
70.6 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
74.2 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.5Ω,VGE=±15V, Tj=150oC |
|
179 |
|
ns |
|
tr |
Rise Time |
|
85 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
670 |
|
ns |
|
|
tf |
Fall Time |
|
124 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
76.5 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
81.9 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V |
|
2400 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=600A,VGE=0V,Tj=25oC |
|
1.95 |
2.40 |
V |
|
IF=600A,VGE=0V,Tj=125oC |
|
2.05 |
|
|||
|
IF=600A,VGE=0V,Tj=150oC |
|
2.10 |
|
|||
|
Qr |
Recovered Charge |
VCC=600V,IF=600A, -di/dt=4300A/μs,VGE=- 15V, Tj=25oC |
|
58.9 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
276 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
20.9 |
|
mJ |
|
|
Qr |
Recovered Charge |
VCC=600V,IF=600A, -di/dt=4300A/μs,VGE=- 15V, Tj=125oC |
|
109 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
399 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
41.8 |
|
mJ |
|
|
Qr |
Recovered Charge |
VCC=600V,IF=600A, -di/dt=4300A/μs,VGE=- 15V, Tj=150oC |
|
124 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
428 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
48.5 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
|
ΔR/R |
Deviation of R100 |
TC= 100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
|
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
|
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
|
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
|
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.038 0.066 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.028 0.049 0.009 |
|
K/W |
|
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 |
3.0 3.0 |
|
6.0 6.0 |
N.m |
|
G |
Weight of Module |
|
350 |
|
g |
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