Brief introduction
IGBT module, produced by STARPOWER. 1700V 600A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol |
Description |
GD600HFT170C3S |
Units |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
@ TC=25℃ @ TC=80℃ |
950 |
A |
600 | |||
ICM(1) |
Pulsed Collector Current tp= 1ms |
1200 |
A |
IF |
Diode Continuous Forward Current |
600 |
A |
IFM |
Diode Maximum Forward Current |
1200 |
A |
PD |
Maximum power Dissipation @ Tj=175℃ |
3571 |
W |
Tj |
Maximum Junction Temperature |
150 |
℃ |
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
3400 |
V |
|
Mounting Torque |
Power Terminal Screw:M4 Power Terminal Screw:M8 |
1.8 to 2.1 8.0 to 10 |
N.m |
Mounting Screw:M6 |
4.25 to 5.75 |
N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise note
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR) CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1700 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24mA,VCE=VGE, Tj=25℃ |
5.2 |
5.8 |
6.4 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=600A,VGE=15V, Tj=25℃ |
|
2.00 |
2.45 |
V |
IC=600A,VGE=15V, Tj=125℃ |
|
2.40 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
QG |
Gate charge |
VGE=-15…+15V |
|
7.0 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=600A, RGon=2.4Ω, RGoff=3.0Ω, VGE=±15V,Tj=25℃ |
|
650 |
|
ns |
tr |
Rise Time |
|
155 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1300 |
|
ns |
|
tf |
Fall Time |
|
180 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
125 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
186 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=600A, RGon=2.4Ω, RGoff=3.0Ω, VGE=±15V,Tj=125℃ |
|
701 |
|
ns |
tr |
Rise Time |
|
198 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1590 |
|
ns |
|
tf |
Fall Time |
|
302 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
186 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
219 |
|
mJ |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
52.8 |
|
nF |
Coes |
Output Capacitance |
|
2.20 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
1.75 |
|
nF |
|
|
ISC |
SC Data |
tSC≤10μs,VGE=15V, Tj=125℃,VCC=1000V, VCEM ≤1700V |
|
2400 |
|
A |
RGint |
Internal Gate Resistance |
|
|
1.3 |
|
Ω |
LCE |
Stray Inductance |
|
|
20 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
|
0.18 |
|
mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=600A |
Tj=25℃ |
|
1.80 |
2.20 |
V |
Tj=125℃ |
|
1.90 |
|
||||
Qr |
Recovered Charge |
IF=600A, VR=900V, di/dt=-3800A/μs, VGE=-15V |
Tj=25℃ |
|
580 |
|
μC |
Tj=125℃ |
|
640 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
160 |
|
A |
|
Tj=125℃ |
|
258 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
96 |
|
mJ |
|
Tj=125℃ |
|
171 |
|
||||
Thermal Characteristics
Symbol |
Parameter |
Typ. |
Max. |
Units |
RθJC |
Junction-to-Case (per IGBT) |
|
42 |
K/kW |
RθJC |
Junction-to-Case (per Diode) |
|
94 |
K/kW |
RθCS |
Case-to-Sink (Conductive grease applied, per Module) |
6 |
|
K/kW |
Weight |
Weight of Module |
1500 |
|
g |
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