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GD600HFT120C2S G8

IGBT Module,1200V 600A

Brand:
STARPOWER
Spu:
GD600HFT120C2S G8
  • Introduction
Introduction

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

 

IGBT

 

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±30

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

970

600

A

ICM

Pulsed Collector Current  tp=1ms

1200

A

PD

Maximum Power Dissipation  @ Tj=175oC

3260

W

Diode

 

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

600

A

IFM

Diode Maximum Forward Current  tp=1ms

1200

A

Module

 

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

 

VCE(sat)

 

 

Collector to Emitter

Saturation Voltage

IC=600A,VGE=15V, Tj=25oC

 

1.70

2.15

 

 

V

IC=600A,VGE=15V, Tj=125oC

 

1.95

 

IC=600A,VGE=15V, Tj=150oC

 

2.00

 

VGE(th)

Gate-Emitter Threshold Voltage

IC=24.0mA,VCE=VGE, Tj=25oC

5.0

5.6

6.5

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

 

 

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

 

 

400

nA

RGint

Internal Gate Resistance

 

 

0.67

 

Ω

Cies

Input Capacitance

VCE=30V,f=1MHz,

VGE=0V

 

51.0

 

nF

Cres

Reverse Transfer

Capacitance

 

1.65

 

nF

QG

Gate Charge

VGE=15V

 

3.21

 

μC

td(on)

Turn-On Delay Time

 

 

VCC=600V,IC=600A,  RG= 1. 1Ω,

VGE=±15V, Tj=25oC

 

332

 

ns

tr

Rise Time

 

106

 

ns

td(off)

Turn-Off Delay Time

 

525

 

ns

tf

Fall Time

 

125

 

ns

Eon

Turn-On Switching

Loss

 

12.6

 

mJ

Eoff

Turn-Off Switching

Loss

 

54.6

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=600V,IC=600A,  RG= 1. 1Ω,

VGE=±15V, Tj= 125oC

 

335

 

ns

tr

Rise Time

 

110

 

ns

td(off)

Turn-Off Delay Time

 

575

 

ns

tf

Fall Time

 

168

 

ns

Eon

Turn-On Switching

Loss

 

21.2

 

mJ

Eoff

Turn-Off Switching

Loss

 

69.2

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=600V,IC=600A,  RG= 1. 1Ω,

VGE=±15V, Tj= 150oC

 

340

 

ns

tr

Rise Time

 

112

 

ns

td(off)

Turn-Off Delay Time

 

586

 

ns

tf

Fall Time

 

185

 

ns

Eon

Turn-On Switching

Loss

 

22.9

 

mJ

Eoff

Turn-Off Switching

Loss

 

74.0

 

mJ

 

ISC

 

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=900V, VCEM≤1200V

 

 

2400

 

 

A

Diode Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

VF

Diode Forward

Voltage

IF=600A,VGE=0V,Tj=25oC

 

1.65

2.10

 

V

IF=600A,VGE=0V,Tj= 125oC

 

1.65

 

IF=600A,VGE=0V,Tj= 150oC

 

1.65

 

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=5000A/μs,VGE=- 15V, Tj=25oC

 

62.6

 

μC

IRM

Peak Reverse

Recovery Current

 

292

 

A

Erec

Reverse Recovery Energy

 

22.6

 

mJ

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=5000A/μs,VGE=- 15V, Tj= 125oC

 

116

 

μC

IRM

Peak Reverse

Recovery Current

 

424

 

A

Erec

Reverse Recovery Energy

 

44.8

 

mJ

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=5000A/μs,VGE=- 15V, Tj= 150oC

 

132

 

μC

IRM

Peak Reverse

Recovery Current

 

454

 

A

Erec

Reverse Recovery Energy

 

51.7

 

mJ

 

 

Module Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

 

 

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

 

0.35

 

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

 

 

0.046

0.078

K/W

 

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

 

0.111

0.189

0.035

 

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

 

5.0

5.0

N.m

G

Weight of Module

 

300

 

g

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