IGBT Module，1200V 450A
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol |
Description |
GD450HFT120C6S_G8 |
Units |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±30 |
V |
IC |
Collector Current @ TC=25℃ @ TC=100℃ |
660 450 |
A |
ICM |
Pulsed Collector Current tp=1ms |
900 |
A |
IF |
Diode Continuous Forward Current |
450 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
900 |
A |
PD |
Maximum Power Dissipation @ Tj=175℃ |
2083 |
W |
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
Tjop |
Operating Junction Temperature |
-40 to +150 |
℃ |
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 |
3.0 to 6.0 3.0 to 6.0 |
N.m |
G |
Weight of Module |
910 |
g |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=18.0mA,VCE=VGE, Tj=25℃ |
5.0 |
5.6 |
6.5 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=450A,VGE=15V, Tj=25℃ |
|
1.70 |
2.15 |
V |
IC=450A,VGE=15V, Tj=125℃ |
|
1.95 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=450A, RG=1.5Ω, VGE=±15V, Tj=25℃ |
|
360 |
|
ns |
tr |
Rise Time |
|
140 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
550 |
|
ns |
|
tf |
Fall Time |
|
146 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
11.5 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
48.0 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=450A, RG=1.5Ω, VGE=±15V, Tj=125℃ |
|
374 |
|
ns |
tr |
Rise Time |
|
147 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
623 |
|
ns |
|
tf |
Fall Time |
|
178 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
17.9 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
64.5 |
|
mJ |
|
Cies |
Input Capacitance |
VCE=30V,f=1MHz, VGE=0V |
|
39.0 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
1.26 |
|
nF |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
1800 |
|
A |
RGint |
Internal Gate Resistance |
|
|
0.67 |
|
Ω |
LCE |
Stray Inductance |
|
|
20 |
|
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal To Chip |
|
|
1.10 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=450A |
Tj=25℃ |
|
1.65 |
2.25 |
V |
Tj=125℃ |
|
1.65 |
|
||||
Qr |
Recovered Charge |
IF=450A, VR=600V, RG=1.5Ω, VGE=-15V |
Tj=25℃ |
|
41.6 |
|
μC |
Tj=125℃ |
|
77.5 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
241 |
|
A |
|
Tj=125℃ |
|
325 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
23.2 |
|
mJ |
|
Tj=125℃ |
|
43.1 |
|
||||
NTC TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
Thermal Characteristics
Symbol |
Parameter |
Typ. |
Max. |
Units |
RθJC |
Junction-to-Case (per IGBT) |
|
0.072 |
K/W |
RθJC |
Junction-to-Case (per Diode) |
|
0.110 |
K/W |
RθCS |
Case-to-Sink (Conductive grease applied) |
0.005 |
|
K/W |
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