GD450HTL120C7S

Symbol

Description

GD450HTL120C7S

Units

VCES

Collector-Emitter Voltage    @ Tj=25℃

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current    @ TC=25℃

@ TC= 100℃

900

450

A

ICM

Pulsed Collector Current    tp=1ms

900

A

Ptot

Total Power Dissipation    @ Tj= 175℃

3191

W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CES

Collector-Emitter

Breakdown Voltage

Tj=25℃

1200

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25℃

5.0

mA

IGES

Gate-Emitter Leakage

Current

VGE=VGES,VCE=0V, Tj=25℃

400

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VGE(th)

Gate-Emitter Threshold

Voltage

IC=18.0mA,VCE=VGE, Tj=25℃

5.0

6.2

7.0

V

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=450A,VGE=15V, Tj=25℃

2.00

2.45

V

IC=450A,VGE=15V, Tj= 125℃

2.20

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

QG

Gate charge

VGE=- 15…+15V

4.6

μC

Eon

Turn-On Switching

Loss

VCC=600V,IC=450A,  RG=2.3Ω,VGE=±15V, Tj=25℃

48

mJ

Eoff

Turn-Off Switching

Loss

28

mJ

Etot

Total Switching Loss

76

mJ

Eon

Turn-On Switching

Loss

VCC=600V,IC=450A,  RG=2.3Ω,VGE=±15V, Tj= 125℃

66

mJ

Eoff

Turn-Off Switching

Loss

45

mJ

Etot

Total Switching Loss

111

mJ

d(on)

Turn-On Delay Time

VCC=600V,IC=450A,   RG=2.3Ω,VGE= ±15 V, Tj=25℃

205

ns

tr

Rise Time

70

ns

td(off)

Turn-Off Delay Time

465

ns

tf

Fall Time

50

ns

td(on)

Turn-On Delay Time

VCC=600V,IC=450A,   RG=2.3Ω,VGE= ±15 V, Tj= 125℃

225

ns

tr

Rise Time

70

ns

td(off)

Turn-Off Delay Time

520

ns

tf

Fall Time

75

ns

Cies

Input Capacitance

VCE=25V,f=1Mhz,

VGE=0V

31.8

nF

Coes

Output Capacitance

2.13

nF

Cres

Reverse Transfer

Capacitance

1.41

nF

ISC

SC Data

tSC≤10μs,VGE ≤15 V, Tj= 125℃,VCC=600V, VCEM≤1200V

2250

A

RGint

Internal Gate Resistance

0.7

Ω

Symbol

Description

GD450HTL120C7S

Units

VRRM

Collector-Emitter Voltage    @ Tj=25℃

1200

V

IF

DC Forward Current    @ TC=80℃

450

A

IFRM

Repetitive Peak Forward Current    tp=1ms

900

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF=450A,VGE=0V

Tj=25℃

1.80

2.20

V

Tj= 125℃

1.90

Qr

Recovered Charge

VR=600 V,

IF=450A,

RG=2.3Ω,

VGE=- 15V

Tj=25℃

58

μC

Tj= 125℃

99

IRM

Peak Reverse

Recovery Current

Tj=25℃

372

A

Tj= 125℃

492

Erec

Reverse Recovery Energy

Tj=25℃

22

mJ

Tj= 125℃

45

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC= 100℃,R100=493.3Ω

-5

5

%

P25

Power Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.1 5K))]

3375

K

Symbol

Parameter

Min.

Typ.

Max.

Units

VISO

Isolation Voltage    RMS,f=50Hz,t=1min

2500

V

LCE

Stray Inductance

20

nH

RCC’+EE ’

Module Lead Resistance,Terminal to Chip @ TC=25℃

1.1

mΩ

RθJC

Junction-to-Case (per IGBT)

Junction-to-Case (per DIODE)

0.047

0.078

K/W

RθCS

Case-to-Sink (Conductive grease applied)

0.005

K/W

Tjmax

Maximum Junction Temperature

175

℃

TSTG

Storage Temperature Range

-40

125

℃

Mounting

Torque

Power Terminal Screw:M5

3.0

6.0

N.m

Mounting Screw:M6

3.0

6.0

N.m

Weight

Weight of Module

910

g