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GD450HFY120C2S

IGBT Module,1200V 450A

Brand:
STARPOWER
Spu:
GD450HFY120C2S
  • Introduction
Introduction

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

 

IGBT

 

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

680

450

A

ICM

Pulsed Collector Current  tp=1ms

900

A

PD

Maximum Power Dissipation  @ T =175oC

2173

W

Diode

 

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current  tp=1ms

900

A

Module

 

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

 

VCE(sat)

 

 

Collector to Emitter

Saturation Voltage

IC=450A,VGE=15V, Tj=25oC

 

1.70

2.05

 

 

V

IC=450A,VGE=15V, Tj=125oC

 

1.95

 

IC=450A,VGE=15V, Tj=150oC

 

2.00

 

VGE(th)

Gate-Emitter Threshold Voltage

IC=11.3mA,VCE=VGE, Tj=25oC

5.2

6.0

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

 

 

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

 

 

400

nA

RGint

Internal Gate Resistance

 

 

1.7

 

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

 

46.6

 

nF

Cres

Reverse Transfer

Capacitance

 

1.31

 

nF

QG

Gate Charge

VGE=- 15…+15V

 

3.50

 

μC

td(on)

Turn-On Delay Time

 

 

VCC=600V,IC=450A,  RG=1.5Ω,

VGE=±15V, Tj=25oC

 

328

 

ns

tr

Rise Time

 

76

 

ns

td(off)

Turn-Off Delay Time

 

539

 

ns

tf

Fall Time

 

108

 

ns

Eon

Turn-On Switching

Loss

 

19.5

 

mJ

Eoff

Turn-Off Switching

Loss

 

46.6

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=600V,IC=450A,  RG=1.5Ω,

VGE=±15V, Tj=125oC

 

376

 

ns

tr

Rise Time

 

86

 

ns

td(off)

Turn-Off Delay Time

 

595

 

ns

tf

Fall Time

 

214

 

ns

Eon

Turn-On Switching

Loss

 

36.3

 

mJ

Eoff

Turn-Off Switching

Loss

 

53.5

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=600V,IC=450A,  RG=1.5Ω,

VGE=±15V, Tj=150oC

 

380

 

ns

tr

Rise Time

 

89

 

ns

td(off)

Turn-Off Delay Time

 

608

 

ns

tf

Fall Time

 

232

 

ns

Eon

Turn-On Switching

Loss

 

41.7

 

mJ

Eoff

Turn-Off Switching

Loss

 

55.5

 

mJ

 

ISC

 

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=800V, VCEM≤1200V

 

 

1800

 

 

A

Diode Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

VF

Diode Forward

Voltage

IF=450A,VGE=0V,Tj=25oC

 

1.65

2.10

 

V

IF=450A,VGE=0V,Tj=125oC

 

1.65

 

IF=450A,VGE=0V,Tj=150oC

 

1.65

 

Qr

Recovered Charge

 

VCC=600V,IF=450A,

-di/dt=4370A/μs,VGE=- 15V, Tj=25oC

 

29.4

 

μC

IRM

Peak Reverse

Recovery Current

 

275

 

A

Erec

Reverse Recovery Energy

 

13.2

 

mJ

Qr

Recovered Charge

 

VCC=600V,IF=450A,

-di/dt=4370A/μs,VGE=- 15V, Tj=125oC

 

68.8

 

μC

IRM

Peak Reverse

Recovery Current

 

342

 

A

Erec

Reverse Recovery Energy

 

31.6

 

mJ

Qr

Recovered Charge

 

VCC=600V,IF=450A,

-di/dt=4370A/μs,VGE=- 15V, Tj=150oC

 

79.6

 

μC

IRM

Peak Reverse

Recovery Current

 

354

 

A

Erec

Reverse Recovery Energy

 

35.8

 

mJ

 

 

Module Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

 

 

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

 

0.35

 

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

 

 

0.069

0.108

K/W

 

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

 

0.033

0.051

0.010

 

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

 

5.0

5.0

N.m

G

Weight of Module

 

300

 

g

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