GD450HFX170C6S

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

706

450

A

ICM

Pulsed Collector Current  tp=1ms

900

A

PD

Maximum Power Dissipation  @ T =175oC

2542

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current  tp=1ms

900

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=450A,VGE=15V, Tj=25oC

1.85

2.20

V

IC=450A,VGE=15V, Tj=125oC

2.25

IC=450A,VGE=15V, Tj=150oC

2.35

VGE(th)

Gate-Emitter Threshold Voltage

IC= 18.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

1.67

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

54.2

nF

Cres

Reverse Transfer

Capacitance

1.32

nF

QG

Gate Charge

VGE=- 15…+15V

4.24

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=450A,  RG=3.3Ω,VGE=±15V, Tj=25oC

179

ns

tr

Rise Time

105

ns

td(off)

Turn-Off Delay Time

680

ns

tf

Fall Time

375

ns

Eon

Turn-On Switching

Loss

116

mJ

Eoff

Turn-Off Switching

Loss

113

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=450A,  RG=3.3Ω,VGE=±15V, Tj= 125oC

208

ns

tr

Rise Time

120

ns

td(off)

Turn-Off Delay Time

784

ns

tf

Fall Time

613

ns

Eon

Turn-On Switching

Loss

152

mJ

Eoff

Turn-Off Switching

Loss

171

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=450A,  RG=3.3Ω,VGE=±15V, Tj= 150oC

208

ns

tr

Rise Time

120

ns

td(off)

Turn-Off Delay Time

800

ns

tf

Fall Time

720

ns

Eon

Turn-On Switching

Loss

167

mJ

Eoff

Turn-Off Switching

Loss

179

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC= 1000V, VCEM≤1700V

1800

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=450A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=450A,VGE=0V,Tj= 125oC

1.95

IF=450A,VGE=0V,Tj= 150oC

1.90

Qr

Recovered Charge

VR=900V,IF=450A,

-di/dt=4580A/μs,VGE=- 15V Tj=25oC

105

μC

IRM

Peak Reverse

Recovery Current

198

A

Erec

Reverse Recovery Energy

69.0

mJ

Qr

Recovered Charge

VR=900V,IF=450A,

-di/dt=4580A/μs,VGE=- 15V Tj= 125oC

187

μC

IRM

Peak Reverse

Recovery Current

578

A

Erec

Reverse Recovery Energy

129

mJ

Qr

Recovered Charge

VR=900V,IF=450A,

-di/dt=4580A/μs,VGE=- 15V Tj= 150oC

209

μC

IRM

Peak Reverse

Recovery Current

585

A

Erec

Reverse Recovery Energy

150

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

ΔR/R

Deviation of R100

TC= 100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

K

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

1.10

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.059

0.083

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.031

0.043

0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0

3.0

6.0

6.0

N.m

G

Weight of Module

350

g