GD450HFX120C6SA

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

680

450

A

ICM

Pulsed Collector Current  tp=1ms

900

A

PD

Maximum Power Dissipation  @ Tj=175oC

2173

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current  tp=1ms

900

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=450A,VGE=15V, Tj=25oC

1.70

2.15

V

IC=450A,VGE=15V, Tj=125oC

1.95

IC=450A,VGE=15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC= 11.3mA,VCE=VGE, Tj=25oC

5.2

5.8

6.4

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.7

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

46.6

nF

Cres

Reverse Transfer

Capacitance

1.31

nF

QG

Gate Charge

VGE=- 15…+15V

3.50

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=450A,  RG= 1.3Ω,

VGE=±15V, Tj=25oC

203

ns

tr

Rise Time

64

ns

td(off)

Turn-Off Delay Time

491

ns

tf

Fall Time

79

ns

Eon

Turn-On Switching

Loss

16.1

mJ

Eoff

Turn-Off Switching

Loss

38.0

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=450A,  RG= 1.3Ω,

VGE=±15V, Tj= 125oC

235

ns

tr

Rise Time

75

ns

td(off)

Turn-Off Delay Time

581

ns

tf

Fall Time

109

ns

Eon

Turn-On Switching

Loss

27.8

mJ

Eoff

Turn-Off Switching

Loss

55.5

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=450A,  RG= 1.3Ω,

VGE=±15V, Tj= 150oC

235

ns

tr

Rise Time

75

ns

td(off)

Turn-Off Delay Time

621

ns

tf

Fall Time

119

ns

Eon

Turn-On Switching

Loss

30.5

mJ

Eoff

Turn-Off Switching

Loss

61.5

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=800V, VCEM≤1200V

1800

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=450A,VGE=0V,Tj=25oC

1.85

2.30

V

IF=450A,VGE=0V,Tj= 125oC

1.90

IF=450A,VGE=0V,Tj= 150oC

1.95

Qr

Recovered Charge

VCC=600V,IF=450A,

-di/dt=6600A/μs,VGE=- 15V, Tj=25oC

55.2

μC

IRM

Peak Reverse

Recovery Current

518

A

Erec

Reverse Recovery Energy

26.0

mJ

Qr

Recovered Charge

VCC=600V,IF=450A,

-di/dt=6600A/μs,VGE=- 15V, Tj= 125oC

106

μC

IRM

Peak Reverse

Recovery Current

633

A

Erec

Reverse Recovery Energy

47.5

mJ

Qr

Recovered Charge

VCC=600V,IF=450A,

-di/dt=6600A/μs,VGE=- 15V, Tj= 150oC

121

μC

IRM

Peak Reverse

Recovery Current

661

A

Erec

Reverse Recovery Energy

53.9

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

ΔR/R

Deviation of R100

TC= 100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

K

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

1.10

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.069

0.108

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.030

0.046

0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0

3.0

6.0

6.0

N.m

G

Weight of Module

350

g