GD400TLT120E5S,IGBT Module,1200V 400A

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±30

V

IC

Collector Current @ TC=25oC

@ TC= 100oC

655

400

A

ICM

Pulsed Collector Current tp= 1ms

800

A

PD

Maximum Power Dissipation @ Tj=175oC

2205

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

300

A

IFM

Diode Maximum Forward Current tp=1ms

600

A

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

650

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC=70oC

515

400

A

ICM

Pulsed Collector Current tp= 1ms

800

A

PD

Maximum Power Dissipation @ Tj=175oC

1304

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

650

V

IF

Diode Continuous Forward Current

400

A

IFM

Diode Maximum Forward Current tp=1ms

800

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=400A,VGE=15V, Tj=25oC

1.70

2.15

V

IC=400A,VGE=15V, Tj=125oC

1.95

IC=400A,VGE=15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC= 16.0mA,VCE=VGE, Tj=25oC

5.0

5.7

6.5

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.6

Ω

Cies

Input Capacitance

VCE=30V,f=1MHz,

VGE=0V

40.5

nF

Cres

Reverse Transfer

Capacitance

1.14

nF

QG

Gate Charge

VGE=15V

2.22

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj=25oC

408

ns

tr

Rise Time

119

ns

td(off)

Turn-Off Delay Time

573

ns

tf

Fall Time

135

ns

Eon

Turn-On Switching

Loss

10.5

mJ

Eoff

Turn-Off Switching

Loss

36.2

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj= 125oC

409

ns

tr

Rise Time

120

ns

td(off)

Turn-Off Delay Time

632

ns

tf

Fall Time

188

ns

Eon

Turn-On Switching

Loss

13.2

mJ

Eoff

Turn-Off Switching

Loss

53.6

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj= 150oC

410

ns

tr

Rise Time

123

ns

td(off)

Turn-Off Delay Time

638

ns

tf

Fall Time

198

ns

Eon

Turn-On Switching

Loss

14.4

mJ

Eoff

Turn-Off Switching

Loss

56.1

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=900V, VCEM≤1200V

1600

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=300A,VGE=0V,Tj=25oC

1.65

2.10

V

IF=300A,VGE=0V,Tj= 125oC

1.65

IF=300A,VGE=0V,Tj= 150oC

1.65

Qr

Recovered

Charge

VR=600V,IF=300A,

-di/dt=5200A/μs,VGE=- 15V Tj=25oC

34.0

μC

IRM

Peak Reverse

Recovery Current

280

A

Erec

Reverse Recovery Energy

19.5

mJ

Qr

Recovered

Charge

VR=600V,IF=300A,

-di/dt=5200A/μs,VGE=- 15V Tj= 125oC

55.6

μC

IRM

Peak Reverse

Recovery Current

350

A

Erec

Reverse Recovery Energy

29.8

mJ

Qr

Recovered

Charge

VR=600V,IF=300A,

-di/dt=5200A/μs,VGE=- 15V Tj= 150oC

63.6

μC

IRM

Peak Reverse

Recovery Current

368

A

Erec

Reverse Recovery Energy

34.0

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=400A,VGE=15V, Tj=25oC

1.45

1.90

V

IC=400A,VGE=15V, Tj=125oC

1.60

IC=400A,VGE=15V, Tj=150oC

1.70

VGE(th)

Gate-Emitter Threshold Voltage

IC=6.4mA,VCE=VGE, Tj=25oC

5.1

5.8

6.4

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

1.0

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

12.7

nF

Cres

Reverse Transfer

Capacitance

0.73

nF

QG

Gate Charge

VGE=- 15…+15V

4.30

μC

td(on)

Turn-On Delay Time

VCC=300V,IC=400A, RG= 1.8Ω,

VGE=±15V, Tj=25oC

102

ns

tr

Rise Time

79

ns

td(off)

Turn-Off Delay Time

458

ns

tf

Fall Time

49

ns

Eon

Turn-On Switching

Loss

2.88

mJ

Eoff

Turn-Off Switching

Loss

12.9

mJ

td(on)

Turn-On Delay Time

VCC=300V,IC=400A, RG= 1.8Ω,

VGE=±15V, Tj= 125oC

111

ns

tr

Rise Time

80

ns

td(off)

Turn-Off Delay Time

505

ns

tf

Fall Time

70

ns

Eon

Turn-On Switching

Loss

4.20

mJ

Eoff

Turn-Off Switching

Loss

16.0

mJ

td(on)

Turn-On Delay Time

VCC=300V,IC=400A, RG= 1.8Ω,

VGE=±15V, Tj= 150oC

120

ns

tr

Rise Time

80

ns

td(off)

Turn-Off Delay Time

510

ns

tf

Fall Time

80

ns

Eon

Turn-On Switching

Loss

4.50

mJ

Eoff

Turn-Off Switching

Loss

17.0

mJ

ISC

SC Data

tP≤6μs,VGE=15V,

Tj=150oC,VCC=360V, VCEM≤600V

2000

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=400A,VGE=0V,Tj=25oC

1.55

2.00

V

IF=400A,VGE=0V,Tj= 125oC

1.50

IF=400A,VGE=0V,Tj= 150oC

1.45

Qr

Recovered

Charge

VR=300V,IF=400A,

-di/dt=5500A/μs,VGE=- 15V Tj=25oC

18.2

μC

IRM

Peak Reverse

Recovery Current

215

A

Erec

Reverse Recovery Energy

3.58

mJ

Qr

Recovered

Charge

VR=300V,IF=400A,

-di/dt=5500A/μs,VGE=- 15V Tj= 125oC

29.8

μC

IRM

Peak Reverse

Recovery Current

280

A

Erec

Reverse Recovery Energy

7.26

mJ

Qr

Recovered

Charge

VR=300V,IF=400A,

-di/dt=5500A/μs,VGE=- 15V Tj= 150oC

34.2

μC

IRM

Peak Reverse

Recovery Current

300

A

Erec

Reverse Recovery Energy

8.30

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

RthJC

Junction-to-Case (per T1,T2 IGBT)

Junction-to-Case (per D1,D2 Diode)

Junction-to-Case (per T3,T4 IGBT)

Junction-to-Case (per D3,D4 Diode)

0.068

0.138

0.115

0.195

K/W

RthCH

Case-to-Heatsink (per T1,T2 IGBT)

Case-to-Heatsink (per D1,D2 Diode)

Case-to-Heatsink (per T3,T4 IGBT)

Case-to-Heatsink (per D3,D4 Diode)

Case-to-Heatsink (per Module)

0.136

0.276

0.230

0.391

0.028

K/W

M

Mounting Torque, Screw M6

Terminal Connection Torque, Screw M5

3.0

2.5

6.0

5.0

N.m