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Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
T1,T2 IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±30 |
V |
|
IC |
Collector Current @ TC=25oC @ TC= 100oC |
655 400 |
A |
|
ICM |
Pulsed Collector Current tp= 1ms |
800 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
2205 |
W |
D1,D2 Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current |
300 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
600 |
A |
T3,T4 IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
650 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC=70oC |
515 400 |
A |
|
ICM |
Pulsed Collector Current tp= 1ms |
800 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
1304 |
W |
D3,D4 Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
650 |
V |
|
IF |
Diode Continuous Forward Current |
400 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
800 |
A |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
T1,T2 IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=400A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V |
|
IC=400A,VGE=15V, Tj=125oC |
|
1.95 |
|
|||
|
IC=400A,VGE=15V, Tj=150oC |
|
2.00 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 16.0mA,VCE=VGE, Tj=25oC |
5.0 |
5.7 |
6.5 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
0.6 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=30V,f=1MHz, VGE=0V |
|
40.5 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
1.14 |
|
nF |
|
|
QG |
Gate Charge |
VGE=15V |
|
2.22 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, VGE=±15V, Tj=25oC |
|
408 |
|
ns |
|
tr |
Rise Time |
|
119 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
573 |
|
ns |
|
|
tf |
Fall Time |
|
135 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
10.5 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
36.2 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, VGE=±15V, Tj= 125oC |
|
409 |
|
ns |
|
tr |
Rise Time |
|
120 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
632 |
|
ns |
|
|
tf |
Fall Time |
|
188 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
13.2 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
53.6 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, VGE=±15V, Tj= 150oC |
|
410 |
|
ns |
|
tr |
Rise Time |
|
123 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
638 |
|
ns |
|
|
tf |
Fall Time |
|
198 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
14.4 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
56.1 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V |
|
1600 |
|
A |
D1,D2 Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=300A,VGE=0V,Tj=25oC |
|
1.65 |
2.10 |
V |
|
IF=300A,VGE=0V,Tj= 125oC |
|
1.65 |
|
|||
|
IF=300A,VGE=0V,Tj= 150oC |
|
1.65 |
|
|||
|
Qr |
Recovered Charge |
VR=600V,IF=300A, -di/dt=5200A/μs,VGE=- 15V Tj=25oC |
|
34.0 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
280 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
19.5 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=600V,IF=300A, -di/dt=5200A/μs,VGE=- 15V Tj= 125oC |
|
55.6 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
350 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
29.8 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=600V,IF=300A, -di/dt=5200A/μs,VGE=- 15V Tj= 150oC |
|
63.6 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
368 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
34.0 |
|
mJ |
T3,T4 IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=400A,VGE=15V, Tj=25oC |
|
1.45 |
1.90 |
V |
|
IC=400A,VGE=15V, Tj=125oC |
|
1.60 |
|
|||
|
IC=400A,VGE=15V, Tj=150oC |
|
1.70 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=6.4mA,VCE=VGE, Tj=25oC |
5.1 |
5.8 |
6.4 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
1.0 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
12.7 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.73 |
|
nF |
|
|
QG |
Gate Charge |
VGE=- 15…+15V |
|
4.30 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=400A, RG= 1.8Ω, VGE=±15V, Tj=25oC |
|
102 |
|
ns |
|
tr |
Rise Time |
|
79 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
458 |
|
ns |
|
|
tf |
Fall Time |
|
49 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
2.88 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
12.9 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=400A, RG= 1.8Ω, VGE=±15V, Tj= 125oC |
|
111 |
|
ns |
|
tr |
Rise Time |
|
80 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
505 |
|
ns |
|
|
tf |
Fall Time |
|
70 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
4.20 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
16.0 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=400A, RG= 1.8Ω, VGE=±15V, Tj= 150oC |
|
120 |
|
ns |
|
tr |
Rise Time |
|
80 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
510 |
|
ns |
|
|
tf |
Fall Time |
|
80 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
4.50 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
17.0 |
|
mJ |
|
|
ISC |
SC Data |
tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤600V |
|
2000 |
|
A |
D5,D6 Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=400A,VGE=0V,Tj=25oC |
|
1.55 |
2.00 |
V |
|
IF=400A,VGE=0V,Tj= 125oC |
|
1.50 |
|
|||
|
IF=400A,VGE=0V,Tj= 150oC |
|
1.45 |
|
|||
|
Qr |
Recovered Charge |
VR=300V,IF=400A, -di/dt=5500A/μs,VGE=- 15V Tj=25oC |
|
18.2 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
215 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
3.58 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=300V,IF=400A, -di/dt=5500A/μs,VGE=- 15V Tj= 125oC |
|
29.8 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
280 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
7.26 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=300V,IF=400A, -di/dt=5500A/μs,VGE=- 15V Tj= 150oC |
|
34.2 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
300 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
8.30 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
RthJC |
Junction-to-Case (per T1,T2 IGBT) Junction-to-Case (per D1,D2 Diode) Junction-to-Case (per T3,T4 IGBT) Junction-to-Case (per D3,D4 Diode) |
|
|
0.068 0.138 0.115 0.195 |
K/W |
|
RthCH |
Case-to-Heatsink (per T1,T2 IGBT) Case-to-Heatsink (per D1,D2 Diode) Case-to-Heatsink (per T3,T4 IGBT) Case-to-Heatsink (per D3,D4 Diode) Case-to-Heatsink (per Module) |
|
0.136 0.276 0.230 0.391 0.028 |
|
K/W |
|
M |
Mounting Torque, Screw M6 Terminal Connection Torque, Screw M5 |
3.0 2.5 |
|
6.0 5.0 |
N.m |
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