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Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
7
|
Symbol |
Description |
GD400SGT170C2S |
Units |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
700 |
A |
|
400 |
|||
|
ICM(1) |
Pulsed Collector Current tp=1ms |
800 |
A |
|
IF |
Diode Continuous Forward Current |
400 |
A |
|
IFM |
Diode Maximum Forward Current |
800 |
A |
|
PD |
Maximum Power Dissipation @ Tj= 175℃ |
3000 |
W |
|
TSC |
Short Circuit Withstand Time @ Tj=125℃ |
10 |
μs |
|
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
I2t-value,Diode |
VR=0V,t=10ms,Tj=125℃ |
25500 |
A2s |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
|
Mounting Torque |
Power Terminal Screw:M4 Power Terminal Screw:M6 |
1.1 to 2.0 2.5 to 5.0 |
N.m |
|
Mounting Screw:M6 |
3.0 to 5.0 |
N.m |
0C2S
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
V(BR)CES |
Collector-Emitter Breakdown Voltage |
VGE=0V, IC= 14mA, Tj=25℃ |
1700 |
|
|
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
3.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 16mA,VCE=VGE, Tj=25℃ |
5.2 |
5.8 |
6.4 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=400A,VGE=15V, Tj=25℃ |
|
2.00 |
2.45 |
V |
|
IC=400A,VGE=15V, Tj= 125℃ |
|
2.40 |
|
Switching Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
||
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=400A, |
|
278 |
|
ns |
||
|
tr |
Rise Time |
RG=3.6Ω,VGE= ±15 V, |
|
81 |
|
ns |
||
|
td(off) |
Turn-Off Delay Time |
Tj=25℃ |
|
802 |
|
ns |
||
|
tf |
Fall Time |
VCC=900V,IC=400A, RG=3.6Ω,VGE= ±15 V, Tj=25℃ |
|
119 |
|
ns |
||
|
Eon |
Turn-On Switching Loss |
|
104 |
|
mJ |
|||
|
Eoff |
Turn-Off Switching Loss |
|
86 |
|
mJ |
|||
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=400A, RG=3.6Ω,VGE= ±15 V, Tj= 125℃ |
|
302 |
|
ns |
||
|
tr |
Rise Time |
|
99 |
|
ns |
|||
|
td(off) |
Turn-Off Delay Time |
|
1002 |
|
ns |
|||
|
tf |
Fall Time |
|
198 |
|
ns |
|||
|
Eon |
Turn-On Switching Loss |
|
136 |
|
mJ |
|||
|
Eoff |
Turn-Off Switching Loss |
|
124 |
|
mJ |
|||
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
36 |
|
nF |
||
|
Coes |
Output Capacitance |
|
1.5 |
|
nF |
|||
|
Cres |
Reverse Transfer Capacitance |
|
1.2 |
|
nF |
|||
|
ISC |
SC Data |
tSC≤10μs,VGE=15V, Tj=125℃,VCC= 1000V, VCEM≤1700V |
|
1600 |
|
A |
||
|
RGint |
Internal Gate Resistance |
|
|
1.9 |
|
Ω |
||
|
LCE |
Stray Inductance |
|
|
|
20 |
nH |
||
|
RCC’+EE ’ |
Module Lead Resistance, Terminal to Chip |
TC=25℃ |
|
0.18 |
|
mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
|
VF |
Diode Forward Voltage |
IF=400A |
Tj=25℃ |
|
1.80 |
2.20 |
V |
|
Tj= 125℃ |
|
1.90 |
|
||||
|
Qr |
Diode Reverse Recovery Charge |
IF=400A, VR=900 V, di/dt=-4250A/μs, VGE=- 15V |
Tj=25℃ |
|
99 |
|
μC |
|
Tj= 125℃ |
|
172 |
|
||||
|
IRM |
Diode Peak Reverse Recovery Current |
Tj=25℃ |
|
441 |
|
A |
|
|
Tj= 125℃ |
|
478 |
|
||||
|
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
53 |
|
mJ |
|
|
Tj= 125℃ |
|
97 |
|
||||
Thermal Characteristics
|
Symbol |
Parameter |
Typ. |
Max. |
Units |
|
RθJC |
Junction-to-Case (IGBT Part, per Module) |
|
0.05 |
K/W |
|
RθJC |
Junction-to-Case (DIODE Part, per Module) |
|
0.09 |
K/W |
|
RθCS |
Case-to-Sink (Conductive grease applied) |
0.035 |
|
K/W |
|
Weight |
Weight of Module |
300 |
|
g |
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