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GD400HFX170C2S

IGBT Module, 1700V 400A

Brand:
STARPOWER
Spu:
GD400HFX170C2S
  • Introduction
Introduction

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

648

400

A

ICM

Pulsed Collector Current  tp=1ms

800

A

PD

Maximum Power Dissipation      T =175oC

2380

W

 

Diode

 

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

400

A

IFM

Diode Maximum Forward Current  tp=1ms

800

A

Module

 

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

 

VCE(sat)

 

 

Collector to Emitter

Saturation Voltage

IC=400A,VGE=15V, Tj=25oC

 

1.85

2.20

 

 

V

IC=400A,VGE=15V, Tj=125oC

 

2.25

 

IC=400A,VGE=15V, Tj=150oC

 

2.35

 

VGE(th)

Gate-Emitter Threshold Voltage

IC= 16.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

 

 

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

 

 

400

nA

RGint

Internal Gate Resistance

 

 

1.88

 

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

 

48.2

 

nF

Cres

Reverse Transfer

Capacitance

 

1.17

 

nF

QG

Gate Charge

VGE=- 15V…+15V

 

3.77

 

μC

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=400A,    RG=0.82Ω,VGE=±15V, Tj=25oC

 

204

 

ns

tr

Rise Time

 

38

 

ns

td(off)

Turn-Off Delay Time

 

425

 

ns

tf

Fall Time

 

113

 

ns

Eon

Turn-On Switching

Loss

 

97.9

 

mJ

Eoff

Turn-Off Switching

Loss

 

84.0

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=400A,    RG=0.82Ω,VGE=±15V, Tj=125oC

 

208

 

ns

tr

Rise Time

 

50

 

ns

td(off)

Turn-Off Delay Time

 

528

 

ns

tf

Fall Time

 

184

 

ns

Eon

Turn-On Switching

Loss

 

141

 

mJ

Eoff

Turn-Off Switching

Loss

 

132

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=400A,    RG=0.82Ω,VGE=±15V, Tj=150oC

 

216

 

ns

tr

Rise Time

 

50

 

ns

td(off)

Turn-Off Delay Time

 

544

 

ns

tf

Fall Time

 

204

 

ns

Eon

Turn-On Switching

Loss

 

161

 

mJ

Eoff

Turn-Off Switching

Loss

 

137

 

mJ

 

ISC

 

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC= 100V, VCEM≤1700V

 

 

1600

 

 

A

Diode Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

VF

Diode Forward

Voltage

IF=400A,VGE=0V,Tj=25oC

 

1.80

2.25

 

V

IF=400A,VGE=0V,Tj=125oC

 

1.90

 

IF=400A,VGE=0V,Tj=150oC

 

1.95

 

Qr

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=- 15V Tj=25oC

 

116

 

μC

IRM

Peak Reverse

Recovery Current

 

666

 

A

Erec

Reverse Recovery Energy

 

63.8

 

mJ

Qr

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=- 15V Tj=125oC

 

187

 

μC

IRM

Peak Reverse

Recovery Current

 

662

 

A

Erec

Reverse Recovery Energy

 

114

 

mJ

Qr

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=- 15V Tj=150oC

 

209

 

μC

IRM

Peak Reverse

Recovery Current

 

640

 

A

Erec

Reverse Recovery Energy

 

132

 

mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

 

 

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

 

0.35

 

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

 

 

0.063

0.105

K/W

 

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

 

0.032

0.053

0.010

 

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

 

5.0

5.0

N.m

G

Weight of Module

 

300

 

g

 

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